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Buried DFB laser and preparation method thereof

A technology of a DFB laser and a buried layer is applied in the field of buried DFB laser and its preparation and preparation, which can solve the problems of reducing the emission efficiency of the device, impurity diffusion, etc., and achieve the effects of improving the performance, increasing the injection density, and avoiding the increase of the series resistance.

Pending Publication Date: 2019-03-22
全磊光电股份有限公司
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Problems solved by technology

Although the series resistance can be reduced by increasing the doping concentration of the third conductive layer, it is also easy to cause impurities to diffuse to the active region, thereby reducing the emission efficiency of the device

Method used

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  • Buried DFB laser and preparation method thereof
  • Buried DFB laser and preparation method thereof
  • Buried DFB laser and preparation method thereof

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Embodiment Construction

[0039] The buried DFB laser provided by the present invention and its manufacturing method will be described in detail below in conjunction with specific embodiments.

[0040] See figure 2 , the first embodiment of the present invention provides a method for preparing a buried DFB laser 20, which specifically includes the following steps:

[0041] S1, providing a semiconductor structure 21, the semiconductor structure is formed by sequentially stacking a first conductive layer 21a, an active layer 21b, and a second conductive layer 21c, and the second conductive layer 21c is far away from the active layer 21b Form a barrier layer 22 on the surface;

[0042] S2, forming a mask layer 23 on the surface of the barrier layer 22 away from the second conductive layer 21c, under the protection of the mask layer 23, etching the semiconductor structure 21 and the barrier layer 22, The etching depth exceeds the active layer 21b, reaches the first conductive layer 21a, and obtains a bo...

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Abstract

The invention relates to a buried DFB laser, comprising: a first conductive layer, an active layer and a second conductive layer stacked in sequence, a part of the first conductive layer forming a boss structure with the active layer and the second conductive layer, the surface of the second conductive layer, away from the active layer, being a top surface of the boss structure; a barrier layer disposed on the top surface of the boss structure, a central portion of the barrier layer forming a groove by etching, and the groove being communicated with the top surface of the boss structure; a first buried layer, the first buried layer being formed on the side surface of the boss structure, and covering the side surface of the boss structure and the first conductive layer; a second buried layer, the second buried layer being formed on a surface of the first buried layer; a third conductive layer, the third conductive layer being formed on the top surface of the boss structure through the groove, and being formed on the surface of the second buried layer. The invention also relates to a preparation method of the buried laser.

Description

technical field [0001] The invention relates to a buried DFB laser and a preparation method thereof. Background technique [0002] With the development of high-speed optical communication, higher requirements are put forward for the laser source of communication. Compared with FP (Fabry-perot) lasers, DFB (Distributed Feedback) lasers have good mode selection capabilities and can achieve narrower linewidths, and have been widely used in optical communication systems. In order to obtain a higher performance DFB laser, the bar structure of the laser plays a very important role. At present, the buried heterojunction structure (hereinafter referred to as the BH structure) can realize the confinement of carriers and photons by epitaxially growing materials with lower refractive index on both sides of the active region and designing a reverse-biased PN junction, thereby achieving a low threshold. and high injection density. [0003] In order to further improve the laser emissio...

Claims

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Application Information

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IPC IPC(8): H01S5/12H01S5/22
CPCH01S5/12H01S5/2222
Inventor 单智发张永
Owner 全磊光电股份有限公司
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