Method for simulating texturing solution of poly-silicon solar cell piece
A solar cell and polysilicon technology, applied in the field of solar cells, can solve the problems of cost reduction, high utilization rate of square ingot silicon material, high cost of silicon material, etc., and achieve the effect of exempting the activation process
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Embodiment 1
[0035] Configure hydrofluoric acid: nitric acid: water = 50:234:170, when cooled to the reaction temperature of 7-12°, the corrosion amount of the mortar wire-cut silicon wafer after 90s is 0.1688g, as shown in the attached drawing Figure 5 shown.
Embodiment 2
[0037] Configure hydrofluoric acid: nitric acid: water = 50:234:170, when cooled to 7-12 ° reaction temperature, after adding 1.4645 g of sodium nitrite, after 90 seconds, the corrosion amount of the mortar wire-cut silicon wafer is 0.3100 g, as shown in the attached figure Figure 6 shown.
Embodiment 3
[0039] Configure hydrofluoric acid: nitric acid: water = 50:234:170, when cooled to a reaction temperature of 7-10°, the corrosion amount of diamond wire cut silicon wafers after 90s is 0.1634g.
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