Method and Structure of Nitride Growth Based on Amorphous Substrate
A nitride and substrate technology, used in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve the problems of overall epitaxy obstruction and lack of growth of nitride materials, and achieve the goal of promoting development and promoting industrial progress. Effect
Active Publication Date: 2021-02-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
Despite the large application potential, there is no lattice match between amorphous substrates and nitrides, and the growth of nitride materials on amorphous substrates is hampered by the lack of bulk epitaxy
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Embodiment 1
[0030] In this embodiment, first as figure 2 As shown in (a), the amorphous composite substrate is a combination of quartz glass and graphene. The graphene on the quartz glass is a graphene film grown by chemical vapor deposition (CVD). The graphene film here has single-layer and multilayer Layer structure, wherein the multilayer is 2 to 10 layers. The amorphous combined substrate here can also be a combination of two-dimensional materials listed above and any two materials in the amorphous substrate.
[0031] Then, a thin layer of silicon dioxide is deposited on the surface of the graphene substrate by plasma-enhanced chemical vapor deposition (PECVD), with a deposition temperature of 300°C, a power of 50W, a pressure of 600mTorr, and a gas flow rate of N 2 O1000sccm; SiH 4 500sccm; He25sccm; N 2 475sccm, the growth time is 50 minutes, and the thickness of the deposited silicon dioxide thin layer is Such as figure 2 (b) shown.
[0032] Afterwards, the silicon dioxi...
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Abstract
A method and structure for growing nitride based on an amorphous substrate, the method comprising the following steps: depositing a thin layer of silicon dioxide on an amorphous composite substrate, and preparing a silicon dioxide on the amorphous composite substrate by nanoimprinting Silicon dioxide array holes, the silicon dioxide on the amorphous substrate is etched, the silicon dioxide at the bottom of the array holes is etched away, and the substrate part is exposed; then the silicon dioxide layer with the array holes is used as a mask, Nitride material is selectively grown on the amorphous composite substrate. The invention improves the crystal quality of the epitaxial nitride material on the amorphous composite substrate, promotes the development of photoelectric devices and electronic power devices based on the nitride material, and is beneficial to promote industrial progress.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method and structure for growing nitrides based on an amorphous substrate. Background technique [0002] High-quality single-crystal nitride thin films are crucial for applications in optoelectronic devices and electronic power devices. Traditional substrates, including silicon substrates, sapphire substrates, silicon carbide substrates, and gallium nitride substrates, can grow high-quality nitride films because of their small lattice mismatch with nitride materials. However, traditional substrates are small in size, which is limited in large-scale manufacturing applications. For amorphous substrate metals and alloys, amorphous glass, and amorphous plastics, it has the characteristics of large area and low cost, and is an ideal substrate material. Despite their great application potential, there is no lattice match between amorphous substrates and nitrides, and the gro...
Claims
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IPC IPC(8): H01L21/02H01L31/18H01L33/00H01L29/06H01L31/0352H01L33/20
CPCH01L21/02422H01L21/02444H01L21/02488H01L21/02502H01L21/02513H01L21/0254H01L21/0262H01L29/0684H01L31/035281H01L31/1852H01L31/1856H01L33/007H01L33/20Y02P70/50
Inventor 梁冬冬魏同波闫建昌王军喜
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI