Ultraviolet LED epitaxial preparation method and ultraviolet LED

A technology of LED structure and epitaxy, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of ultraviolet LEDs and single luminous layer of ultraviolet LEDs, and achieve the effect of improving luminous efficiency

Inactive Publication Date: 2019-04-05
MAANSHAN JASON SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, the light-emitting layer of the ultraviolet LED is single, and a single ultraviolet LED can only emit ultraviolet light of one wavelength, resulting in relatively low luminous efficiency of the ultraviolet LED.

Method used

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  • Ultraviolet LED epitaxial preparation method and ultraviolet LED
  • Ultraviolet LED epitaxial preparation method and ultraviolet LED
  • Ultraviolet LED epitaxial preparation method and ultraviolet LED

Examples

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Embodiment 1

[0055] figure 1 It is a flow chart of the ultraviolet LED epitaxial preparation method provided by Embodiment 1 of the present invention, figure 2 It is a schematic structural diagram of the ultraviolet LED epitaxy provided by Embodiment 1 of the present invention, as figure 1 and figure 2 As shown, the method in this embodiment may include:

[0056] Step S101: pre-flowing metal sources and group V reactants on the substrate, and decomposing them at a first temperature to form a buffer layer.

[0057] The substrate 0 is mainly used to support and improve the film properties. The film is grown on the substrate 0, the material properties of the substrate 0 and the surface shape of the substrate 0 have a great influence on the characteristics of the film, because the thickness of the film is generally between nanometers and microns, and the surface of the substrate 0 is required to have an ultra-high flatness The combination of film and substrate O is also a very important ...

Embodiment 2

[0077] On the basis of the first embodiment above, in order to ensure the quality of the N-type doped AlwGa1-wN layer, image 3 It is a schematic flow chart of the method for preparing ultraviolet LED epitaxy provided by Embodiment 2 of the present invention, Figure 4 It is a schematic structural diagram of the ultraviolet LED epitaxy provided by Embodiment 3 of the present invention, such as image 3 and Figure 4 As shown, the ultraviolet LED epitaxial preparation method provided by the embodiment of the present invention may also include:

[0078] S201: growing a non-doped AlvGa1-vN layer on the buffer layer, and growing an N-type doped AlwGa1-wN layer on the non-doped AlvGa1-vN layer.

[0079] Specifically, the undoped AlvGa1-vN layer 6 can be grown by adjusting the temperature of the reaction chamber while feeding trimethylaluminum, trimethylgallium and NH3, and then growing on the undoped AlvGa1-vN layer 6 N-type doped AlwGa1-wN layer 2 . The embodiment of the prese...

Embodiment 3

[0085] Ultraviolet LEDs can be used in the field of sterilization. In order to realize the preparation of ultraviolet LEDs with ultra-high bactericidal functions, on the basis of the above-mentioned embodiment 1 and embodiment 2, the preparation method of three-section ultraviolet 280nm band ultraviolet LEDs will be described below as an example. A UV LED with a single wavelength of 280nm can include the following steps:

[0086] Step 1: In the MOCVD reaction chamber of metal organic chemical vapor deposition equipment, the temperature is raised to 900°C, the pressure is 400mbar, and trimethylaluminum (150 milliliters per minute (ml / min)) and ammonia gas are introduced at the same time for 3 minutes, and the sapphire A reaction occurs on the substrate to form a 25nm AlN buffer layer.

[0087] The second step: the temperature is raised to 1200°C and the pressure is lowered to 200mbar, the AlN buffer layer undergoes a decomposition reaction, and after the AlN buffer layer is dec...

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Abstract

The invention provides an ultraviolet LED epitaxial preparation method and an ultraviolet LED. The method comprises the steps of: pre-passing a metal source and a V-group reactant on a substrate to decompose at a first temperature to form a buffer layer; growing an N-type doped AlwGa1-wN layer at a second temperature on the buffer layer; and growing a multi-section LED structure at a third temperature on the N-type doped AlwGa1-wN layer, wherein the number of sections of the multi-section LED structure is 2-50, each section of the LED structure comprises a AlxGa1-xN / AlyGa1-yN multiple quantumwell structure and a P-type doped AlmGa1-mN layer and sends light with one or more than one wavelengths so as to achieve that a single ultraviolet LED sends ultraviolet light with different wavelengths so as to improve the ultraviolet LED luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of ultraviolet light-emitting diodes, in particular to an epitaxial preparation method of ultraviolet LEDs and ultraviolet LEDs. Background technique [0002] With the continuous development of science and technology in our country, both material life and spiritual life have been greatly improved. However, in recent years, the aggravation of smog and water pollution has seriously affected people's quality of life. In order to protect their own health, various disinfection and sterilization devices have been born, such as air purifiers and water processors. The most important sterilizing functional components of these sterilizing devices are 200nm-280nm band ultraviolet lamps, and currently more popular ones are deep ultraviolet light-emitting diode (Light-Emitting Diode, LED) lamps. At the same time, it has been found in medicine that the 280nm~320nm band ultraviolet lamp has excellent phototherapy effect, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/08
CPCH01L33/007H01L33/06H01L33/08H01L33/12H01L33/0062H01L33/145H01L33/305
Inventor 黄小辉康建郑远志梁旭东陈向东
Owner MAANSHAN JASON SEMICON CO LTD
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