Epitaxial fabrication method of GaN-based light-emitting diode with tunnel junction
A light-emitting diode, gallium nitride-based technology, used in gaseous chemical plating, coatings, semiconductor devices, etc., can solve problems such as hydrogen diffusion barriers and difficult activation of p-type semiconductor layers, and achieve the effect of steep interface doping concentration
Inactive Publication Date: 2019-04-12
JIANGXI ZHAO CHI SEMICON CO LTD
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Problems solved by technology
[0008] Aiming at the deficiencies of the prior art, the present invention provides a gallium nitride-based light-emitting diode epitaxial preparation method with a tunnel junction, which solves the difficulty in forming an interface between the p-type semiconductor layer and the second n-type semiconductor layer in the prior art. For p++ / n++ heavily doped tunnel junctions, the second n-type semiconductor layer based on gallium nitride will hinder the diffusion of hydrogen, making it difficult to activate the p-type semiconductor layer based on gallium nitride
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Embodiment 1
[0041] Embodiment 1, as Figure 1-2 As shown, a gallium nitride-based light-emitting diode epitaxial preparation method with a tunnel junction specifically includes the following steps:
[0042] Step S1: growing a GaN-based buffer layer 102, a first n-type semiconductor layer 103, an active layer 104, and a p-type semiconductor layer 105 on a sapphire substrate 101 by metal-organic chemical vapor deposition (MOCVD) , the p-type semiconductor layer 105 includes an electron blocking layer 1051 , a p-doped semiconductor layer 1052 and a p++ heavily doped semiconductor layer 1053 . The specific growth conditions of the step S1 are as follows:
[0043] Step S101: Growth of the buffer layer 102: the sapphire substrate 101 is introduced into the MOCVD chamber, and TMGa, NH3, N2 and H2 are introduced at 500-600° C. to grow a buffer layer 102 with a thickness of 30 nm and a composition of GaN;
[0044]Step S102: Growth of the first n-type semiconductor layer 103: at 1000-1200° C., fe...
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Abstract
The invention discloses an epitaxial fabrication method of a GaN-based light-emitting diode with a tunnel junction. The epitaxial fabrication method comprises the following steps of S1, growing a GaN-based buffer layer, a first n-type semiconductor layer, an active layer and a p-type semiconductor layer on a substrate; S2, activating the p-type semiconductor layer; S3, performing surface processing on the activated p-type semiconductor layer, and removing a surface pollutant; and S4, growing a GaN-based second n-type semiconductor layer on the p-type semiconductor layer after surface processing. The epitaxial fabrication method has the advantages that p++ / n++ heavy-doping tunnel junction is achieved by a mode of secondary epitaxy, the problem of Mg memory effect in primary epitaxial growthof MOCVD is prevented, and the interface-doping and deeply-steep tunnel junction can be obtained; the p-type semiconductor layer is activated by high-temperature annealing before the second n-type semiconductor layer is grown by secondary epitaxy, and the problem that the p-type semiconductor layer is difficult to activate after being covered with the second n-type semiconductor layer is prevented.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial preparation method of a gallium nitride-based light-emitting diode with a tunnel junction. Background technique [0002] Light Emitting Diode (LED) has the advantages of high electro-optical conversion efficiency, long service life, environmental protection, energy saving, low heat, high brightness and fast response, and has been widely used in various indications, displays, decorations, backlights, General lighting and other fields. [0003] The traditional gallium nitride (GaN)-based light-emitting diode epitaxial structure mainly includes: buffer layer, n-type semiconductor layer, active layer and p-type semiconductor layer. In the gallium nitride-based light-emitting diode device structure, the contact resistance between p-type gallium nitride and the device electrode is higher than that of n-type gallium nitride and the device electrode (about a thousand...
Claims
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IPC IPC(8): H01L33/00H01L33/32C23C16/44C23C16/34
CPCH01L33/0075H01L33/0095H01L33/325C23C16/303C23C16/44
Inventor 顾伟
Owner JIANGXI ZHAO CHI SEMICON CO LTD