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Silicon carbide-based transistor and method for manufacturing same

A technology of transistors and substrates, applied in the direction of transistors, semiconductor/solid-state device manufacturing, thyristors, etc., can solve the problems of breakdown voltage reduction, breakdown, SiCCMOS can not withstand high voltage, etc., to achieve enhanced breakdown voltage and support breakdown voltage , Improve the effect of breakdown voltage

Active Publication Date: 2019-04-16
IND UNIV COOP FOUND SOGANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the depletion region is formed larger than the cell pitch before avalanche breakdown occurs, breakdown due to punch-through will still occur
Since the breakdown originates from the punch-through, the prior art SiC CMOS cannot withstand high voltage, resulting in a lower breakdown voltage

Method used

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  • Silicon carbide-based transistor and method for manufacturing same
  • Silicon carbide-based transistor and method for manufacturing same
  • Silicon carbide-based transistor and method for manufacturing same

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Embodiment Construction

[0042] The description of the present invention is only an embodiment for structural or functional illustration, and thus the scope of the present invention should not be construed as being limited by the embodiments described in the specification. That is, the embodiments can be modified in various ways and have various forms, and thus the scope of the present invention should be understood to include equivalents that can implement technical ideas. In addition, it is not intended that the objects and effects proposed in the present invention be included in a specific embodiment, or that only effects are included therein, and thus the scope of the present invention should not be construed as being limited thereto.

[0043] Meanwhile, terms used in the present application should be understood as follows.

[0044] Terms such as 'first' and 'second' are used to distinguish one component from another, and the scope of the present invention is not limited by these terms. For examp...

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Abstract

A transistor comprises a substrate; a first and a second type of wells contacting each other at an upper portion of the substrate; and a breakdown voltage improvement region forming vertical high concentration-doped areas according to each type so as to come into vertical contact at a mutual contact portion between the first and the second type of wells vertically from the top surfaces of the first and the second type of wells to the top surface of the substrate.

Description

technical field [0001] The present invention relates to a transistor technology based on silicon carbide, and more particularly, to a transistor based on silicon carbide and a method of manufacturing the transistor, the transistor of silicon carbide structurally prevents (reachthrough) from occurring, Thereby the breakdown voltage is improved and the leakage current is reduced. Background technique [0002] Complementary metal-oxide-semiconductor (CMOS) with good power dissipation characteristics is usually used as an inverter structure. While most metal-oxide-semiconductor (MOS) inverters have a standby current generated in a "high" or "low" state, CMOS inverters have very good standby power characteristics because when one of the transistors on one side Very low standby current is drawn when off. [0003] CMOS using silicon is weak at high temperature and high pressure, which has limitations for use as high-efficiency inverters for power conversion of renewable energy an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H01L29/16H01L27/092H01L29/24
CPCH01L27/092H01L21/823892H01L21/8213H01L29/78H01L29/1608H01L29/66068H01L21/761H01L27/0921H01L29/0638H01L29/1083H01L21/8238H01L27/0922H01L29/24H01L29/0626H01L27/0928H01L21/046H01L21/74H01L29/16H01L21/823878
Inventor 金光沫裴东佑
Owner IND UNIV COOP FOUND SOGANG UNIV