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Spiral photoresist coating structure and preparation device and method thereof

A spiral, photoresist technology, which is applied in spraying devices, photoplate-making process coating equipment, semiconductor/solid-state device manufacturing, etc., can solve the problems of uneven thickness of photoresist, lack of glue in local areas, high price of photoresist, etc., to achieve The effect of reasonable distribution, reduction of abnormal occurrence, and cost reduction

Pending Publication Date: 2019-04-23
JIANGSU UNION SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: the price of photoresist is high, the amount of photoresist consumed by this process is relatively large, and the cost is too high; When the photoresist is slightly soluble in the air, the photoresist at the glue spray port is slightly dissolved in the air, and it will be heated and exploded during coating, which will easily lead to the lack of glue in the local area.

Method used

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  • Spiral photoresist coating structure and preparation device and method thereof
  • Spiral photoresist coating structure and preparation device and method thereof
  • Spiral photoresist coating structure and preparation device and method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0026] like Figure 1-5 As shown, it is a spiral photoresist coating structure, including a wafer 1, the surface of the wafer 1 is covered with a processing solvent layer 1a, and a photoresist layer 2 is arranged above the processing solvent layer 1a, and the photoresist layer 2 is in a spiral shape. , the spiral photoresist layer 2 includes several unit segments 2a connected end to end, the tail end of the adjacent outer layer unit segment 2a is connected to the head end of the inner layer unit segment 2a, and the distance between the adjacent two outer unit segments 2a is greater than The distance between two adjacent unit segments 2a on the inner side. The head end and tail end of each unit segment 2 a are located on the same diameter of the wafer 1 . The tail end of the inner unit segment 2a is located at the center of the wafer 1, and the diameter of the wafer 1 is 200mm. The composition and content of the processing solvent of the processing solvent layer 1a are: propy...

Embodiment 2

[0032] Such as Figure 1-5 As shown, it is a spiral photoresist coating structure, including a wafer 1, the surface of the wafer 1 is covered with a processing solvent layer 1a, and a photoresist layer 2 is arranged above the processing solvent layer 1a, and the photoresist layer 2 is in a spiral shape. , the spiral photoresist layer 2 includes several unit segments 2a connected end to end, the tail end of the adjacent outer layer unit segment 2a is connected to the head end of the inner layer unit segment 2a, and the distance between the adjacent two outer unit segments 2a is greater than The distance between two adjacent unit segments 2a on the inner side. The head end and tail end of each unit segment 2 a are located on the same diameter of the wafer 1 . The tail end of the inner unit segment 2a is located at the center of the wafer 1, and the diameter of the wafer 1 is 195mm. The composition and content of the processing solvent of the processing solvent layer 1a are: pr...

Embodiment 3

[0038] Such as Figure 1-5 As shown, it is a spiral photoresist coating structure, including a wafer 1, the surface of the wafer 1 is covered with a processing solvent layer 1a, and a photoresist layer 2 is arranged above the processing solvent layer 1a, and the photoresist layer 2 is in a spiral shape. , the spiral photoresist layer 2 includes several unit segments 2a connected end to end, the tail end of the adjacent outer layer unit segment 2a is connected to the head end of the inner layer unit segment 2a, and the distance between the adjacent two outer unit segments 2a is greater than The distance between two adjacent unit segments 2a on the inner side. The head end and tail end of each unit segment 2 a are located on the same diameter of the wafer 1 . The tail end of the inner unit segment 2a is located at the center of the wafer 1, and the diameter of the wafer 1 is 205 mm. The composition and content of the processing solvent of the processing solvent layer 1a are: 6...

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Abstract

The invention discloses a spiral photoresist coating structure and a preparation device and method thereof and belongs to the field of semiconductor packaging manufacturing. The spiral photoresist coating structure comprises a wafer; the surface of the wafer is covered with a processing solvent layer and a photoresist layer; the photoresist layer is spiral. The device comprises a machine body; a circular rotating table is rotationally arranged on the upper side of the machine body; a rotating driving mechanism is arranged in the machine body; and a moving glue coating mechanism is arranged onthe upper portion of the rotating table. The preparation method comprises the following steps that the wafer is placed in the center of the rotating table at first and tightly sucked through a vacuumsuction cup, the wafer is sprayed with a processing solvent through a glue spraying arm, then the rotation table is controlled to keep rotating, the glue spraying arm moves to the edge of the wafer tostart spraying photoresist, radially move to the center of the wafer until the glue spraying arm moves to the position above the center of the wafer, and stops spraying photoresist. The use amount ofphotoresist can be reduced, the photoresist coating time can be shortened, thus, the photoresist is distributed on the surface of the wafer more properly, and the cost is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor packaging manufacturing industry, and in particular relates to a spiral photoresist coating structure and a preparation device and method thereof. Background technique [0002] In the prior art, photolithography technology refers to the technology of transferring the pattern on the mask plate to the substrate by means of photoresist under the action of light. The main process is as follows: first, ultraviolet light is irradiated on the surface of the substrate with a layer of photoresist film through the mask plate, causing the photoresist in the exposed area to undergo a chemical reaction; Photoresist, so that the pattern on the mask plate is copied to the photoresist film; finally, the pattern is transferred to the substrate by etching technology. [0003] In the field of lithography in the semiconductor packaging manufacturing industry, there is a conventional photoresist coating process method: s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05B13/04B05B13/02G03F7/16H01L21/027
CPCG03F7/16H01L21/027B05B13/0228B05B13/0431
Inventor 刘祥峰周德榕许原诚陈洋
Owner JIANGSU UNION SEMICON
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