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A si for photovoltaic polysilicon production 2 no 2 oPreparation method of ceramic powder

A technology of ceramic powder and polysilicon, which is applied in the field of preparation of Si2N2O ceramic powder, can solve the problems of high production cost and achieve the effects of low cost, simple process and short preparation cycle

Active Publication Date: 2021-12-14
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method solves the problem of Si in the prior art 2 N 2 The production cost of O ceramic powder is high; the produced Si 2 N 2 O Ceramic powder can be used to prepare ceramic crucibles and release coatings for photovoltaic polysilicon production, solve the problem of adhesion and cracking between silicon ingots and crucibles, and improve the quality and yield of silicon ingots

Method used

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  • A si for photovoltaic polysilicon production <sub>2</sub> no <sub>2</sub> oPreparation method of ceramic powder
  • A si for photovoltaic polysilicon production <sub>2</sub> no <sub>2</sub> oPreparation method of ceramic powder
  • A si for photovoltaic polysilicon production <sub>2</sub> no <sub>2</sub> oPreparation method of ceramic powder

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preparation example Construction

[0034] Specifically, the present invention proposes a Si 2 N 2 The preparation method of O ceramic powder comprises the steps of: placing the mixed powder in a nitrogen atmosphere, inducing the self-propagating combustion reaction of the mixed powder to obtain Si 2 N 2 O ceramic powder; wherein, in parts by weight, the mixed powder includes Si powder and SiO 2 powder; the mixed powder also includes Si 2 N 2 O powder and / or NH 4 Cl powder. The present invention only needs to induce the self-propagating combustion reaction of the mixed powder to obtain Si 2 N 2 O ceramic powder, the reaction process is simple, without high temperature heating, long-term heat preservation, etc.; in addition, the present invention utilizes the heat released by inducing the mixed powder to undergo a high temperature reaction, so that the unreacted part of the powder reaches a reaction temperature and continues to react , thereby reducing the required energy consumption, and then reducing th...

Embodiment 1

[0053] A kind of Si 2 N 2 The preparation of O ceramic powder comprises the steps:

[0054] 35g of Si powder, 25g of SiO 2 powder and 40g of Si 2 N 2 O powder is mixed evenly to obtain a mixed powder; in a high-pressure combustion synthesis equipment with a nitrogen atmosphere of 4MPa, a spiral tungsten wire is used to energize and generate heat to induce a self-propagating combustion reaction of the mixed powder to obtain Si 2 N 2 O ceramic powder.

[0055] The XRD test was carried out on the obtained ceramic powder, and the results showed that the product composition was Si 2 N 2 O, no impurity phase is generated; the obtained ceramic powder is tested by SEM, and the results show that the product has a fine particle size distribution, such as figure 1 As shown; the obtained powder is prepared into a ceramic coating, coated on the surface of a quartz substrate, and a high-temperature sessile drop experiment is carried out, and the silicon melt is measured for Si 2 N ...

Embodiment 2

[0057] A kind of Si 2 N 2 The preparation of O ceramic powder comprises the steps:

[0058] 42g of Si powder, 30g of SiO 2 powder, 27g of Si 2 N 2 O powder and 1 g of NH 4 Cl powder is mixed evenly to obtain a mixed powder; in a high-pressure combustion synthesis equipment with a nitrogen atmosphere of 3MPa, a spiral tungsten wire is used to energize and generate heat to induce a self-propagating combustion reaction of the mixed powder to obtain Si 2 N 2 O ceramic powder.

[0059] The XRD test was carried out on the obtained ceramic powder, and the results showed that the product composition was Si 2 N 2 O, no impurity phase is formed; the obtained ceramic powder is tested by SEM, and the results show that the particle size of the product is evenly distributed; the obtained powder is prepared into a ceramic coating, coated on the surface of a quartz substrate, and subjected to a high-temperature sessile drop experiment. Measured silicon melt to Si 2 N 2 The contact ...

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Abstract

The invention discloses a Si for photovoltaic polysilicon production 2 N 2 The preparation method of O ceramic powder comprises the steps of: placing the mixed powder in a nitrogen atmosphere, inducing the self-propagating combustion reaction of the mixed powder to obtain Si 2 N 2 O ceramic powder; wherein, the mixed powder includes Si powder and SiO 2 powder; the mixed powder also includes Si 2 N 2 O powder and / or NH 4 Cl powder. Si for photovoltaic polysilicon production proposed by the present invention 2 N 2 The preparation method of O ceramic powder uses the heat released by the reaction to make the unreacted part reach the reaction temperature and then react, which has the characteristics of simple process, short preparation cycle, low energy consumption and low cost.

Description

technical field [0001] The present invention relates to Si 2 N 2 O ceramic powder preparation technical field. More specifically, it relates to a Si 2 N 2 O preparation method of ceramic powder. Background technique [0002] In the production process of photovoltaic polysilicon ingots, ceramic crucible is a key material. Silicon materials are melted in the crucible, crystal grows, annealed and cooled, and cast into polysilicon ingots. The silicon ingots are cut into silicon wafers according to requirements, which can be used to manufacture solar cells. . At present, quartz ceramic crucibles are used in the production of photovoltaic polysilicon ingots. The silicon melt reacts with the quartz crucible at high temperature. On the one hand, impurity elements enter and contaminate the silicon melt; The quality and yield of ingots are improved. Therefore, the method of coating silicon nitride coating on the surface of the quartz crucible is usually used to prevent the rea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/597C04B35/626
Inventor 贺刚邓书香王良杨增朝李江涛
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI