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Wafer Direct Bonding Method

A direct bonding, wafer technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid state devices, etc., can solve problems such as affecting the bonding effect, and achieve the effects of low cost, elimination of air bubbles, and reduction of pressure difference

Active Publication Date: 2020-11-20
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing method, bubbles are easily formed in the edge area of ​​the wafer, which will affect the bonding effect

Method used

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  • Wafer Direct Bonding Method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example approach

[0041] like figure 1 As shown, it is a flowchart of the direct wafer bonding method of the first embodiment of the present invention. The direct wafer bonding method of the first embodiment of the present invention includes the following steps:

[0042] Step 1, providing a first wafer and a second wafer for bonding, a plurality of chips are formed on the first wafer and there are dicing lines between the chips, and the first wafer The edge of the first wafer also has a dicing line; the first surface of the first wafer and the first surface of the second wafer are corresponding bonding surfaces.

[0043] Both the substrate materials of the first wafer and the second wafer are silicon substrates.

[0044] The second wafer serves as a carrier wafer.

[0045] Step 2. Pre-cutting the first wafer, the pre-cutting cuts off the dicing line on the edge of the first surface of the first wafer to a certain depth, and is used to increase the number of the first wafer in the subsequent b...

no. 2 example approach

[0063] The second embodiment of the wafer direct bonding method of the present invention includes the following steps:

[0064] Step 1, providing a first wafer and a second wafer for bonding, a plurality of chips are formed on the first wafer and there are dicing lines between the chips, and the first wafer The edge of the first wafer also has a dicing line; the first surface of the first wafer and the first surface of the second wafer are corresponding bonding surfaces.

[0065] Both the substrate materials of the first wafer and the second wafer are silicon substrates.

[0066] The second wafer serves as a carrier wafer.

[0067] Step 2. Pre-cutting the first wafer, the pre-cutting cuts off the dicing line on the edge of the first surface of the first wafer to a certain depth, and is used to increase the number of the first wafer in the subsequent bonding process. circle and the bonded facet spacing of the edge region of the second wafer.

[0068] Step 3, preprocessing th...

no. 3 example approach

[0082] The wafer direct bonding method of the third embodiment of the present invention includes the following steps:

[0083] Step 1, providing a first wafer and a second wafer for bonding, a plurality of chips are formed on the first wafer and there are dicing lines between the chips, and the first wafer The edge of the first wafer also has a dicing line; the first surface of the first wafer and the first surface of the second wafer are corresponding bonding surfaces.

[0084] Both the substrate materials of the first wafer and the second wafer are silicon substrates.

[0085] The second wafer serves as a carrier wafer.

[0086] Step 2. Pre-cutting the first wafer, the pre-cutting cuts off the dicing line on the edge of the first surface of the first wafer to a certain depth, and is used to increase the number of the first wafer in the subsequent bonding process. circle and the bonded facet spacing of the edge region of the second wafer.

[0087] Step 3, preprocessing the...

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Abstract

The invention discloses a wafer direct-bonding method, and the method comprises the following steps: 1, providing a first wafer and a second wafer for bonding, and forming a cutting channel at the edge of the first wafer; 2, performing pre-cutting to cut the cutting channel at the edge of the first surface of the first wafer by a certain depth; 3, preprocessing the first wafer and the second wafer; 4, performing pre-bonding of the first wafer and the second wafer; 5, performing bonding of the first wafer and the second wafer, generating gas in the bonding process, and discharging a bonding surface, thereby reducing the pressure difference before bonding at the edge of the first wafer by increasing the distance between the bonding surfaces at the step 2, and preventing bubbles from being generated at the edge of the first wafer by the overlarge pressure difference. Bubbles generated at the edge of the wafer can be reduced or eliminated after bonding, the process is simple, and the costis low.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a wafer direct bonding method. Background technique [0002] In semiconductor manufacturing, devices with 3-dimensional (3D) structures can be realized by bonding wafers together, such as wafer bonding is used in processes such as CMOS image sensors (CIS) and MEMS motion sensors. [0003] In the prior art, the wafer is usually a silicon substrate wafer, and wafer bonding includes direct bonding (Direct Bonding), that is, direct bonding of silicon and silicon and bonding through interlayers (Bonding with inter-layers). ). [0004] The direct bonding includes: thermal bonding or fusion bonding (Fusion Bonding), anodic bonding (Anodic Bonding). [0005] The bonding through the intermediate layer includes: metal bonding (Metal Bonding), glass solution bonding (GlassFrit Bonding), and adhesive bonding (Adhesive Bonding). Metal bonding includes eutec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/18
Inventor 吴佳宏
Owner SHANGHAI HUALI MICROELECTRONICS CORP