A kind of vertical structure led chip and manufacturing method thereof
An LED chip, vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high cost and labor of vertical structure LED chips, and achieve the effect of cost saving, process optimization, and labor reduction.
Active Publication Date: 2020-02-18
ENRAYTEK OPTOELECTRONICS
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Problems solved by technology
[0004] At present, when the vertical structure LED chip is transferred to the substrate, since the composition of the target transfer substrate such as the first bonding structure on the conductive substrate and the second bonding structure on the sapphire substrate are different, it requires two sets of equipment The preparation of the first bonding structure and the second bonding structure can be completed, and at the same time, more labor is required, which makes the cost of the vertical structure LED chip higher
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[0045] image 3 It is a schematic flow chart of the method for preparing the vertical LED chip of this embodiment. Such as image 3 As shown, this embodiment also provides a method for preparing a vertical LED chip comprising the following steps:
[0046] Step S1: Provide a growth substrate and a conductive substrate, an epitaxial layer and a reflective layer are formed on the growth substrate, and the epitaxial layer includes an undoped GaN layer, an N-type GaN layer, and a multiple quantum well layer formed in sequence and a p-type GaN layer, a p-electrode is formed on the lower surface of the conductive substrate;
[0047] Step S2: forming a second bonding structure with a bonding surface on the reflective layer, forming a first bonding structure with a bonding surface on the upper surface of the conductive substrate, wherein the first bonding The materials of the structure and the second bonding structure are the same, and the first bonding structure and the second bond...
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Abstract
The invention provides a vertical structure LED chip and a manufacturing method thereof. The vertical structure LED chip comprises a conductive substrate, a P electrode formed on the lower surface ofthe conductive substrate, a first bonding structure with a bonding surface, a second bonding structure with a bonding surface, a reflecting layer, a P-type GaN layer, a multi-quantum well layer, an N-type GaN layer and an N electrode, wherein the first bonding structure, the second bonding structure, the reflecting layer, the P-type GaN layer, the multi-quantum well layer and the N electrode are sequentially arranged on the conductive substrate. The first bonding structure and the second bonding structure are made of the same material, and the bonding surface of the first bonding structure faces the bonding surface of the second bonding structure. According to the invention, the first bonding structure and the second bonding structure are designed into the two bonding structures made of the same material, so that the first bonding structure and the second bonding structure can be formed by only one set of equipment, and the manual requirement can be reduced, thereby reducing the cost,and optimizing the production line process.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a vertical structure LED chip and a manufacturing method thereof. Background technique [0002] A traditional light emitting diode (Light Emitting Diode, LED) chip is obtained by epitaxy growth on a sapphire substrate, and then by micro-processing technology. The sapphire substrate has the characteristics of good quality, cheap price and good thermal stability. However, the shortcomings of sapphire limit the further improvement of LED performance. There are mainly the following aspects: First, sapphire has poor electrical conductivity, so the traditional LED front-mount chip places the P and N electrodes on the same side, and by etching part of the epitaxy to the N-type GaN surface, on the one hand, it will lose a part On the other hand, it will lead to the current crowding effect, which will increase the temperature of the PN junction and lead to a...
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IPC IPC(8): H01L33/00H01L33/20
Inventor 朱酉良
Owner ENRAYTEK OPTOELECTRONICS