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A kind of laser engraving device and its engraving method

A laser etching and etching technology, which is applied in laser welding equipment, metal processing equipment, welding equipment, etc., can solve the problems of low etching rate, unfavorable process, unavoidable chipping and cracks, etc., so as to improve operation efficiency Effect

Active Publication Date: 2021-03-30
苏州福唐智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are ultrashort pulse laser and ordinary pulsed ultraviolet laser used for sapphire processing. Among them, the ultrashort pulse laser etches silicon wafers, which has a very low removal rate, which is only suitable for precision processing, while ordinary pulsed ultraviolet laser etches silicon wafers. Wafers generally adopt two methods: laser-induced plasma etching and laser back wet etching. Among them, the laser-induced plasma method is difficult to avoid damage phenomena such as chipping and cracks, and the laser back wet etching of silicon crystals is difficult to avoid. The circle also has the problem of extremely low erosion rate
Moreover, the silicon wafer will have a lot of impurity particles before etching, which is not conducive to the accuracy of etching, and after etching, the particles caused by chipping and cracks will also adhere to the surface of the silicon wafer, which is detrimental to subsequent processes

Method used

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  • A kind of laser engraving device and its engraving method
  • A kind of laser engraving device and its engraving method
  • A kind of laser engraving device and its engraving method

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Embodiment Construction

[0026] see Figure 1-2 , the laser etching device of the present invention, comprising;

[0027] Conveying platform 1, described conveying platform 1 has the first conveying belt of Y direction and the second conveying belt of X direction, and described X direction is perpendicular to described Y direction, and the first conveying belt 2 and the second conveying belt 3 are opposite connecting and presenting a T-shape, wherein the connecting position divides the first conveyor belt 2 into a first part and a second part;

[0028] The laser device 4, the imaging device 5, the nitrogen gas cleaning unit 6 and the cleaning liquid cleaning unit 8 arranged in order on the upper part of the first conveyor belt 2, wherein the laser device 4 is located at the upper part of the first part, and the imaging unit 5 is located at the upper part of the first part. The upper part of the connected position, the nitrogen cleaning part 6 and the cleaning liquid cleaning part 8 are located at the...

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Abstract

The present invention provides a laser etching device and an etching method thereof. The laser etching device comprises a conveying table, wherein a laser, an image pickup unit, a nitrogen cleaning unit, a cleaning liquid cleaning unit, and a pushing member are sequentially arranged in an upper portion of a first conveyor belt. According to the laser etching device, the automation is achieved by utilizing a controller to perform integrated control; and the dual purpose of workpiece cleaning before and w etching is achieved, and the work efficiency is improved.

Description

technical field [0001] The invention relates to semiconductor substrate processing technology, belongs to the H01L21 / 00 classification number, and specifically relates to a laser etching device and an etching method thereof. Background technique [0002] At present, in the manufacture of semiconductor integrated circuits, laser etching is a frequently used process. Laser etching technology is a non-contact, non-cutting, and heat-influenced processing method. It has the advantages of excellent processing quality, high efficiency, wide processing range, cleanliness, good economic benefits, easy implementation of automatic control, flexible processing and Features such as intelligent processing solve the problems that cannot be solved by traditional processing technology. At present, there are ultrashort pulse laser and ordinary pulsed ultraviolet laser used for sapphire processing. Among them, the ultrashort pulse laser etches silicon wafers, which has a very low removal rate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/362B23K26/70
Inventor 陈洁
Owner 苏州福唐智能科技有限公司