Photodetector based on tin selenide/silicon heterojunction, and preparation method thereof

A photodetector and silicon heterojunction technology, applied in the field of photodetection, can solve problems such as hindering the application of photodetectors, and achieve the effects of remarkable photoresponse performance, simple preparation method and low cost

Inactive Publication Date: 2019-05-10
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
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Problems solved by technology

However, most of the photodetectors reported so far need to be powered,

Method used

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  • Photodetector based on tin selenide/silicon heterojunction, and preparation method thereof
  • Photodetector based on tin selenide/silicon heterojunction, and preparation method thereof

Examples

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[0023] The invention utilizes a magnetron sputtering method to deposit a SnSe thin film layer on a Si single crystal substrate to obtain a SnSe / Si heterojunction, deposit a metal Pd front electrode through a DC magnetron sputtering technology, press the metal In electrode and connect the metal wire, form the device. When exposed to light, due to the photoelectric effect and the presence of a built-in electric field, the device can exhibit significant response performance to light at an applied voltage of 0 volts.

[0024] The present invention will be described in detail below with reference to the embodiments and the accompanying drawings.

[0025] The invention is a photodetector based on tin selenide / silicon heterojunction, comprising a SnSe thin film layer and a Si single crystal substrate, the Si single crystal substrate is used as the carrier of the SnSe thin film layer, and the SnSe thin film layer is arranged on the surface of the Si single crystal substrate . The Si...

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Abstract

The present invention belongs to the technical field of photodetection, and particularly relates to a photodetector. The photodetector comprises a metal In point electrode, a metal Pd front electrode,a SnSe thin film layer, a Si single crystal substrate and a metal In back electrode arranged in the order from top to bottom. The SnSe thin film layer is prepared by using a magnetron sputtering method. The test results show that the prepared thin film device presents good self-driven photodetection performance and has the advantages of stable performance and the like.

Description

technical field [0001] The invention belongs to the technical field of photodetection, and in particular relates to a photodetector and a preparation method thereof. Background technique [0002] A photodetector is an electronic device that can convert optical signals into electrical signals, and has been widely used in military, biological imaging, nondestructive testing, communications, environmental monitoring and other fields. However, most of the photodetectors reported so far need to be powered, which seriously hinders the application of photodetectors in real life. [Small,2017,13(45):1701687]The self-driven photodetector can not only respond to the incident light, but also absorb the incident light to provide energy for its own work, so the development of the self-driven photodetector will help promote the development of photoelectric Detectors are changing towards miniaturization, intelligence and energy saving. One of the core units of self-driven photodetection t...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0336H01L31/18
CPCY02P70/50
Inventor 凌翠翠郭天超赵琳侯志栋
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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