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Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators

A power conversion device and semiconductor technology, which is applied in the fields of semiconductor devices, power conversion devices, driving devices, vehicles and elevators, and can solve problems such as difficult detection

Active Publication Date: 2022-05-24
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Surge voltage is difficult to detect because it is high voltage and occurs in a short time

Method used

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  • Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators
  • Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators
  • Semiconductor devices, power conversion devices, drive devices, vehicles, and elevators

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0025] The semiconductor device of this embodiment mode includes a first capacitor having a first terminal and a first other terminal, the first terminal and any one of the first electrode and the second electrode of a transistor having a first electrode, a second electrode, and a gate an electrical connection; a first diode having a first anode and a first cathode, the first anode being electrically connected to the first other terminal; a second capacitor having a second terminal and a second other terminal, the second terminal being connected to the first cathode is electrically connected; the sample-and-hold circuit electrically connects the first cathode and the second terminal; the switch is electrically connected in parallel with the second capacitor between the second terminal and the second other terminal; the second diode, There is a second anode and a second cathode, and the second cathode is electrically connected to the first other terminal and the first anode.

...

no. 2 approach

[0084] The power conversion device of this embodiment differs from the power conversion device of the first embodiment in that it further includes a variable resistor electrically connected to the gate, and a control unit that controls the variable resistor based on the voltage value output from the sample-and-hold circuit resistance value. Hereinafter, descriptions of the contents overlapping with those of the first embodiment will be omitted.

[0085] Figure 7 It is a schematic diagram of the power conversion apparatus of this embodiment. The power conversion device of the present embodiment is the inverter circuit 220 including the surge voltage detection circuit 130 .

[0086] Figure 8 It is a schematic diagram of the semiconductor device of this embodiment. The semiconductor device of this embodiment is the surge voltage detection circuit 130 .

[0087] The inverter circuit 220 of the present embodiment realizes so-called dynamic gate control in which the gate volt...

no. 3 approach

[0097] The drive device of the present embodiment is a drive device including the power conversion device of the first embodiment.

[0098] Figure 9 It is a schematic diagram of the drive apparatus of this embodiment. The drive device 1000 includes the motor 340 and the inverter circuit 210 . The motor 340 is driven by the AC voltage output from the inverter circuit 210 .

[0099] According to the present embodiment, by including the inverter circuit 210 capable of detecting the surge voltage, the characteristics of the drive device 1000 are improved.

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Abstract

The present invention relates to a semiconductor device, a power conversion device, a drive device, a vehicle, and an elevator. The present invention provides a semiconductor device capable of detecting surge voltage. A semiconductor device according to an embodiment includes: a first capacitor having a first terminal and a first other terminal, the first terminal being connected to any one of the first electrode and the second electrode of a transistor having a first electrode, a second electrode, and a gate Electrically connected; the first diode has a first anode and a first cathode, and the first anode is electrically connected to the first other terminal; the second capacitor has a second terminal and a second another terminal, and the second terminal is connected to the second terminal A cathode is electrically connected; a sample and hold circuit is electrically connected to the first cathode and the second terminal; a switch is electrically connected in parallel with the second capacitor between the second terminal and the second other terminal; the second diode has a second anode and a second cathode, and the second cathode is electrically connected to the first another terminal and the first anode.

Description

[0001] References to related applications [0002] This application is based on Japanese Patent Application No. 2017-214525 (filed on November 7, 2017), from which the benefit of priority is enjoyed. This application contains the entire contents of this application by reference to this application. technical field [0003] Embodiments of the present invention relate to a semiconductor device, a power conversion device, a drive device, a vehicle, and an elevator. Background technique [0004] In a power transistor that switches at high speed, for example, when it is turned off, a surge voltage due to parasitic inductance may be generated. When a surge voltage is generated, the gate insulating film is destroyed, or a ringing phenomenon (ringing) of the circuit occurs, which is a problem. Because the surge voltage is a high voltage and is generated in a short time, it is difficult to detect. SUMMARY OF THE INVENTION [0005] The problem to be solved by the present inventio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H02M7/537
CPCH02M1/34H02M1/32G01R31/3277G01R31/42G01R19/04H02M1/346H02M7/537G01R19/00H02M1/322
Inventor 池田健太郎
Owner KK TOSHIBA