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Preparation method of tunneling oxidation passivation PERC battery with selective contact with emitter junction

A technology of tunneling oxidation and tunneling oxide layer is applied in the field of tunneling oxidation passivation PERC battery preparation to achieve the effect of improving battery Voc

Inactive Publication Date: 2019-05-14
SHANGHAI SHENZHOU NEW ENERGY DEV
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Problems solved by technology

[0002] At present, for high-efficiency N-type and P-type high-efficiency batteries, the existing surface passivation technology AL 2 o 3 , thermal oxidation and SiNx passivation, basically can only reach the current mainstream level

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  • Preparation method of tunneling oxidation passivation PERC battery with selective contact with emitter junction

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Embodiment 1

[0034] A tunnel oxidation passivation PERC cell with selective contact of the emitter junction (such as figure 1 The preparation method shown) adopts the following steps:

[0035] (1) The silicon wafer 1 (P-type silicon wafer in this embodiment) is removed from the damaged layer in an alkali texturing tank, the surface is polished, and the front side texturing is performed to form a 1-6μm high pyramid suede (in this embodiment 3μm high pyramid suede), that is, suede made of silicon wafer.

[0036] (2) Use wet chemical or high temperature thermal oxidation method to prepare tunnel oxide layer SiO on silicon wafer texture 2 4. The thickness is 0.5nm-2nm, and the CVD method is used to deposit the thickness of 10nm-500nm on the front surface of the silicon wafer 5, and the P atom content is 1×10 19 cm -3 -1×10 21 cm -3 的P-doped polysilicon layer 3;

[0037] Specifically in this embodiment, the tunneling oxide layer SiO 2 4 is the ultra-thin tunneling oxide layer SiO 2 , Thickness 1.8-2...

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Abstract

The invention relates to a preparation method of a tunneling oxidation passivation PERC battery with selective contact with an emitter junction; the preparation method comprises the following steps that a silicon wafer is subjected to single-side texturing, and a tunneling oxidation layer SiO2 and a P-doped polycrystalline silicon layer are prepared on the texturing surface to form an N+ emittingjunction; selective etching is carried out to remove the P-doped polycrystalline silicon layer wound on the back surface, and a front phosphorus-doped polycrystalline silicon layer is activated, and selective doping is carried out on the surface of the emitter junction; an AL2O3 layer is deposited on the back surface of the silicon wafer, and a hydrogenated amorphous silicon nitride passivation antireflection layer is deposited on the front surface and the back surface of the silicon wafer separately; selective patterning and film opening are carried out on the back surface passivation layer;and silk-screen printing is performed on a back surface aluminum electric field, a back electrode and a front surface metal electrode grid line to form front and back electrode metalized ohmic contact. Compared with the prior art, the preparation method disclosed by the invention has the advantages that the emitter junction surface compounding of the existing single-crystal PERC battery is improved, and the Voc of the battery is greatly improved; and the method is compatible with an existing PERC mass production path and is a key development direction of a next-generation high-efficiency single-crystal PERC battery.

Description

Technical field [0001] The invention belongs to the technical field of solar cell preparation, and relates to a method for preparing a PERC cell with a tunneling oxidation passivation passivation with selective contact of an emitter junction. Background technique [0002] At present, for high-efficiency N-type and P-type high-efficiency batteries, the existing surface passivation technology AL 2 O 3 , Thermal oxidation and SiNx passivation, basically can only reach the current mainstream level. In order to further improve the battery efficiency, reaching a battery efficiency of 22% or even more than 23%, the tunnel oxide passivation technology is very good, and it may be compatible with the high-quality surface passivation technology of existing production lines. How to apply the tunneling oxidation passivation technology to the existing industrial production is a challenge we face, such as how to prepare a polysilicon film layer in a low-cost manner, and how to effectively dope ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 汪建强郑飞陶智华赵晨刘慎思张忠卫阮忠立
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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