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An anti-collision low-power RFID tag based on zinc oxide thin film transistor

A technology of RFID tags and zinc oxide thin films, which can be applied to record carriers used in machines, instruments, and electromagnetic radiation induction, etc., can solve problems such as high manufacturing costs, increased recycling costs, and lack of ductility, and achieve cost reduction and cost reduction Effect

Active Publication Date: 2020-04-10
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) CMOS transistors use a large amount of silicon material as the substrate, and there are many layers of masks, so the manufacturing cost is high. The cheapest RFID tag chip available on the market also costs about 20 cents. If it is used once Scenarios of permanent use, or large-scale replacement of old and new, will cause huge cost expenses; if recycled after use, it will increase the cost of recycling, which may not be worth the candle
[0005] (2) CMOS transistor circuits are non-transparent, and their application scenarios will be limited accordingly. It is not suitable for applications that require transparency (such as display screens, fingerprint recognition, etc.)
However, the existing CMOS circuits do not have good ductility regardless of the manufacturing process or packaging. The chip is generally a planar structure and cannot be well attached to the uneven surface of the object.

Method used

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  • An anti-collision low-power RFID tag based on zinc oxide thin film transistor
  • An anti-collision low-power RFID tag based on zinc oxide thin film transistor
  • An anti-collision low-power RFID tag based on zinc oxide thin film transistor

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Embodiment Construction

[0051] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0052] The whole circuit chip of the present invention all adopts zinc oxide thin film transistor to replace traditional CMOS transistor, and its transistor structure is as follows figure 1 As shown, since the ZnO TFT is not sensitive to visible light, but its conductivity is very sensitive to air and water, a top-gate structure with the active layer covered inside is used to deposit ITO 2 on any substrate 1 (such as glass) as Source and drain electrodes, with ZnO 3 as the channel, followed by the ZnO channel and the protective Al 2 o 3 4. The upper layer is Al as the gate oxide layer 2 o 3 5, the top ITO 6 as the gate. Since the substrate no longer needs to use a large amount of silicon, and the number of process layers is significantly reduced compared to CMOS, the manufacturing cost of the chip can be greatly reduced, and the manufacturing cost ...

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Abstract

The invention discloses an anti-collision low-power-consumption RFID (radio frequency identification device) tag based on a zinc oxide thin film transistor, which is designed and realized by taking the zinc oxide thin film transistor (ZnO TFT) as a main body instead of a traditional silicon-based CMOS (complementary metal oxide semiconductor transistor) transistor. A unique multiplexing counter design idea is adopted, so that the hardware resource consumption is reduced, the bit width of interaction data is reduced, and the interaction time is shortened. A dormancy regulation and control ideais adopted, so that the chip power consumption in a non-working state is reduced; and meanwhile, the tag has a special anti-collision algorithm, is realized through a hardware circuit, can realize thesimultaneous identification of multiple tags through being matched with a reader, and has a very high practical value.

Description

technical field [0001] The present invention relates to the application of microelectronics science in the field of the Internet of Things (IoTs). As one of the important nodes of the Internet of Things, radio frequency identification tags are of vital significance to the development of the Internet of Things. Background technique [0002] At present, the Internet of Things is developing rapidly, and the number of its nodes is increasing by an astonishing number. According to the literature review, the number of nodes in the Internet of Things will reach one trillion by 2020. As one of the nodes in the Internet of Things, the development of radio frequency identification tags has become a top priority in today's research. [0003] RFID tags currently generally use traditional silicon-based CMOS technology. After decades of development, its excellent performance has been generally recognized by the industry, but it still has the following disadvantages: [0004] (1) CMOS tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06K19/02G06K19/077G06K7/10
Inventor 马孝宇韩雁叶志陆晓青梁衡滂
Owner ZHEJIANG UNIV
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