An anti-collision low-power RFID tag based on zinc oxide thin film transistor
A technology of RFID tags and zinc oxide thin films, which can be applied to record carriers used in machines, instruments, and electromagnetic radiation induction, etc., can solve problems such as high manufacturing costs, increased recycling costs, and lack of ductility, and achieve cost reduction and cost reduction Effect
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[0051] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0052] The whole circuit chip of the present invention all adopts zinc oxide thin film transistor to replace traditional CMOS transistor, and its transistor structure is as follows figure 1 As shown, since the ZnO TFT is not sensitive to visible light, but its conductivity is very sensitive to air and water, a top-gate structure with the active layer covered inside is used to deposit ITO 2 on any substrate 1 (such as glass) as Source and drain electrodes, with ZnO 3 as the channel, followed by the ZnO channel and the protective Al 2 o 3 4. The upper layer is Al as the gate oxide layer 2 o 3 5, the top ITO 6 as the gate. Since the substrate no longer needs to use a large amount of silicon, and the number of process layers is significantly reduced compared to CMOS, the manufacturing cost of the chip can be greatly reduced, and the manufacturing cost ...
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