Device for separating positive and negative ions, film forming equipment and chamber cleaning method

Abstract

The invention discloses a device for separating positive and negative ions, which is used to realize the separation of positive and negative ions in a plasma source. The opening and the second opening; the electric field generating component is used to generate an electric field with alternating directions, which can make the positive ions and negative ions move to the bottom of the insulating cavity alternately under the force of the electric field; the magnetic field generating component is used to make the negative ions move in the Luo The positive ions enter the first opening after being deflected under the action of the Lorentz force, or the positive ions enter the second opening after being deflected under the action of the Lorentz force. The invention can effectively avoid the recombination of positive and negative ions, and improve the cleaning effect and cleaning efficiency of film forming equipment. The invention also provides a film-forming device equipped with a device for separating positive and negative ions and a chamber cleaning method thereof.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, and more specifically, to a device for separating positive and negative ions, film forming equipment and a chamber cleaning method. Background technique [0002] In recent years, semiconductor equipment has developed rapidly, involving semiconductors, integrated circuits, solar panels, flat-panel displays, microelectronics, light-emitting diodes, etc., and these devices are mainly composed of several layers of thin films with different material thicknesses formed on a substrate. During the film forming process, the film will also grow on the surface of other parts of the film forming equipment, such as the lower surface of the gas shower head, the edge of the heating base, the inner wall of the uniform flow grid, etc. These films are easy to fall off and produce particles, which affect the quality of film formation; therefore, film formation equipment requires frequent and regular...

AI Technical Summary

Problems solved by technology

[0005] However, when RPS generates F - and N + When the argon flow enters the chamber, it needs to pass through multiple links such as the gate valve, the manifold, and the gas shower head. During this process, due to the disappearance of the ion energy supply, the generated F - and N + Collision with argon and F - and N + Attract each other, resulting in lower and lower ion energy, in this case F - and N + will be easily compounded into NF 3 , thereby greatly reducing F - quantity

Therefore, after entering the chamber, the free F - There is not much left, the cleaning efficiency and cleaning effect will be greatly reduced

[0006] At the same time, in F - and N + During the recombination process, a large amount of heat will be released, that is to say, the energy of the plasma generated by the RPS will finally act on the flapper valve, manifold, and gas shower head in the form of heat energy, so these parts need to be water-cooled, resulting in equipment Complicated structure, but also cause waste of energy

[0007] Moreover, in order to reduce the recombination probability of positive and negative ions, the designed channel pipeline is also relatively thick, which makes the diameter of the gate valve larger, which also causes waste

[0008] The above problems have caused the in-situ cleaning function of the film forming equipment in the industry to not be used efficiently. The technical personnel in the industry are also very troubled by this problem, and it has become an urgent issue to be solved in the industry.

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