GaN-based ultraviolet LED epitaxial structure and carrier transport improvement method thereof

An epitaxial structure and carrier technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of EBL application limitations, etc., to reduce electron overflow, improve hole injection efficiency, increase light intensity and light output power Effect

Inactive Publication Date: 2019-06-07
江苏晶曌半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Recent studies have pointed out that the electron confinement of the quantum well region can be improved through the polarization-matched EBL. However, due to the large technical difficulties in growing high-quality crystal technology, the application of the polarization-matched EBL is limited.

Method used

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  • GaN-based ultraviolet LED epitaxial structure and carrier transport improvement method thereof
  • GaN-based ultraviolet LED epitaxial structure and carrier transport improvement method thereof
  • GaN-based ultraviolet LED epitaxial structure and carrier transport improvement method thereof

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Experimental program
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Effect test

Embodiment 1

[0065] This embodiment provides a method for improving carrier transport in a GaN-based ultraviolet LED, including the following steps:

[0066] (1-1) At 1100°C, H 2 Under the atmosphere, treat the sapphire substrate at high temperature for 10 minutes, completely remove the oxides and impurities on the surface of the substrate, and the pressure is 200mbar;

[0067] (1-2) Gradually cool down to 600°C and turn on NH 3 , nitriding the sapphire substrate 1 for 5 minutes at a pressure of 500 mbar;

[0068] (1-3) Keep the temperature constant, turn on TMAl, and grow a low-temperature AlN buffer layer on the sapphire substrate 1 with a thickness of 30nm and a pressure of 500mbar;

[0069] (1-4) Raise the temperature to 1050° C., grow a 1 μm U-GaN layer 3 on the low-temperature AlN buffer layer, the pressure is 500 mbar, and the molar ratio of V / III during the growth process is 500;

[0070] Wherein, Ⅴ represents an element of the fifth main group, and III represents an element of ...

Embodiment 2

[0081] This embodiment provides a method for improving carrier transport in a GaN-based ultraviolet LED, including the following steps:

[0082] (2-1) At 1200°C, H 2 Under the atmosphere, treat the sapphire substrate at high temperature for 5 minutes to completely remove the oxides and impurities on the surface of the substrate, and the pressure is 500mbar;

[0083] (2-2) Gradually cool down to 580°C and turn on NH 3 , nitriding the sapphire substrate for 5 minutes at a pressure of 400 mbar;

[0084] (2-3) Keep the temperature constant, turn on TMAl, and grow a low-temperature AlN buffer layer on the sapphire substrate with a thickness of 40nm and a pressure of 600mbar;

[0085] (2-4) Raise the temperature to 1055°C, grow a 1μm U-GaN layer on the low-temperature GaN buffer layer, the pressure is 600mbar, and the molar ratio of V / III during the growth process is 600;

[0086] Wherein, Ⅴ represents an element of the fifth main group, and III represents an element of the third...

Embodiment 3

[0095] This embodiment provides a method for improving carrier transport in a GaN-based ultraviolet LED, including the following steps:

[0096] (3-1) At 1150°C, H 2 Under the atmosphere, treat the sapphire substrate at high temperature for 8 minutes, completely remove the oxides and impurities on the surface of the substrate, and the pressure is 400mbar;

[0097] (3-2) Gradually cool down to 580°C and turn on NH 3 , nitriding the sapphire substrate for 4 minutes at a pressure of 300 mbar;

[0098] (3-3) Keep the temperature constant, turn on TMAl, and grow a low-temperature AlN buffer layer on the sapphire substrate with a thickness of 45nm and a pressure of 700mbar;

[0099] (3-4) Raise the temperature to 1060°C, grow a 1μm U-GaN layer on the low-temperature GaN buffer layer, the pressure is 700mbar, and the molar ratio of V / III during the growth process is 900;

[0100] Wherein, Ⅴ represents an element of the fifth main group, and III represents an element of the third m...

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Abstract

The present invention discloses a GaN-based ultraviolet LED epitaxial structure and a carrier transport improvement method thereof. The GaN-based ultraviolet LED epitaxial structure comprises from bottom to top in order: a sapphire substrate, a low-temperature GaN buffer layer, a U-GaN layer, a Si-doped N-GaN layer, an AlGaN/GaN ultraviolet MQW layer, an EBL electron blocking layer and an Mg-dopedP-GaN layer, and the electron blocking layer comprises an Al component graded AlxGa1-XN layer and an Al component fixing layer. In the process of designing the GaN-based LED device epitaxial structure on the sapphire substrate, Al component graded AlxGa1-xN layers with different thicknesses are designed in the EBL electron blocking layer to effectively improve the hole injection efficiency and reduce the electron overflowing to obviously improve the light intensity and light output power of the AlGaN/GaN ultraviolet LED compared to a traditional scheme.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a GaN-based ultraviolet LED epitaxial structure and a method for improving carrier transmission thereof. Background technique [0002] GaN-based LEDs have significant energy-saving effects and significant environmental benefits in energy-efficient solid-state lighting, which provide a new way to utilize and control light. However, further improvement of the photoelectric performance of AlGaN / GaN UV LEDs is limited due to electron overflow and poor hole injection during use. The use of P-AlGaN electron blocking layer (EBL) is a traditional method used to reduce electron overflow, but this electron blocking layer often has a strong polarization field, which will lower the last barrier (LB) and the EBL interface. The conduction band barrier, therefore, the electron overflow cannot be effectively suppressed, and the internal polarization induction w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14
Inventor 白俊春李培咸平加峰周小伟
Owner 江苏晶曌半导体有限公司
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