Preparation method of deep-UV LED

Abstract

The present invention provides a preparation method of a deep-UV LED. The preparation method comprises the steps of: providing a substrate, and forming a buffer layer on the substrate; forming mark layers arranged at intervals on the buffer layer; growing n-type AlGaN layers in gaps between the mark layers to form vertically distributed nanorod arrays; and growing a quantum well layer, a p-type AlGaN layer and a p-type GaN layer in order on each n-type AlGaN layer to form core-shell structures comprising the n-type AlGaN layers, the quantum well layers, the p-type AlGaN layers and the p-type GaN layers in order from inside to outside. According to the preparation method of a deep-UV LED, the quantum well layers have large areas compared to a traditional epitaxial structure LED to improve the light emitting area, the light emitting directions of t= most of the quantum well layers are perpendicular to a C surface without being influenced by the quantum-confined stark effect so as to improve the light emitting efficiency.

Description

technical field [0001] The invention relates to the field of LEDs, in particular to a method for preparing a deep ultraviolet LED. Background technique [0002] As a light source, deep ultraviolet LEDs are different from traditional gas deep ultraviolet light sources and mercury deep ultraviolet light sources, and have the advantages of convenience, high efficiency, and environmental protection. High-aluminum component ternary or quaternary nitrides for deep ultraviolet LEDs are the core materials for preparing deep ultraviolet LEDs. However, for a long time, deep ultraviolet LEDs based on high-aluminum component nitrides have been facing problems such as strong absorption of ultraviolet light by inactive materials in LEDs and the quantum-confined Stark effect, resulting in low luminous efficiency of deep ultraviolet LEDs. This greatly restricts the wide application of deep ultraviolet LEDs. [0003] At present, the introduction of nanowires into the LED structure will gre...

AI Technical Summary

Problems solved by technology

This nanowire process is obtained by etching on the LED epitaxial wafer structure. Although this structure can improve the light extraction efficiency, it also loses a large area of ​​the quantum well light-emitting layer, and there are a large number of dangling bonds in the etched section. Easy to form non-radiative recombination centers, reducing luminous efficiency

In addition, this nanowire structure does not solve the quantum-confined Stark effect, and the built-in polarization electric field still exists, which reduces the probability of electron-hole recombination, resulting in low internal quantum efficiency.

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