Preparation method of Gan-based light-emitting diode epitaxial wafer

Abstract

The invention discloses a method for preparing GaN-based light-emitting diode epitaxial wafers, belonging to the field of GaN-based light-emitting diodes. The method includes: providing a substrate; sequentially depositing a buffer layer, an undoped GaN layer, an N-type GaN layer, a defect blocking layer, a multi-quantum well layer, an electron blocking layer, a P-type GaN layer, and a P-type contact layer, the P-type GaN layer includes a first GaN sublayer and a second GaN sublayer, the first GaN sublayer is located between the electron blocking layer and the second GaN sublayer, and When depositing the first GaN sublayer, use N 2 and H 2 The mixed gas is used as the carrier gas, and when depositing the second GaN sublayer, N 2 as a carrier gas.

Description

Technical field [0001] The present invention relates to the field of GaN-based air optical diodes, and more particularly to a method of preparing a GaN-based transmitted emitting diode epitaxial sheet. Background technique [0002] GaN (gallium nitride) based LED (Light Emitting Diode, LED), also known as GaN-based LED chip, typically includes an epitaxial piece and an electrode prepared on an epitaxial sheet. The epitaxial sheet generally includes: a substrate, and a GaN-based extension layer grown on the substrate. The GaN-prolapsed layer includes a sequentially laminated buffer layer, an undoped GaN layer, an N-type GaN layer, MQW (Multiplequantum Well, Multi-quantum well) layer, an electron blocking layer, a p-type GaN layer, and a contact layer. When there is a current injecting the GaN-based LED, the electron and the hole of the N-type region of the n-type GaN layer and the pockets of the P-type region such as the P-type GaN layer enter the MQW active region and composite, ...

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Problems solved by technology

The P-type GaN layer grown in this way has a lower hole concentration

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