Microwave power sensor based on graphene piezoresistive effect
A technology of microwave power and piezoresistive effect, which is applied in the direction of electric power measurement by applying the square law characteristics of circuit components, which can solve the problems of poor stability, small measurement range, low sensitivity, etc., and achieve strong anti-overload ability and large dynamic range , the effect of improving the sensitivity
Active Publication Date: 2019-06-21
NANJING UNIV OF POSTS & TELECOMM
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[0005] The object of the present invention is aimed at above-mentioned present situation, aims at at least solving one of prior art problem, provides the microwave power sensor based on graphene piezoresistive effect and the method for testing microwave power, has overcome the poor stability, the sensitivity that existing microwave power sensor exists Problems such as low and small measuring range
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Embodiment 1
[0029] Such as Figure 1-2 As shown, the microwave power sensor based on the piezoresistive effect of graphene in this embodiment consists of a substrate, a coplanar waveguide transmission line 1, a ground wire 2, a fixed support beam 3, a mass block 4, a current input port 5, a current output port 6, The first transmission line 7, the second transmission line 8 and the graphene piezoresistive block 9 are composed; the coplanar waveguide transmission line 1 is set in the middle of the substrate and the ground line 2 is set on both sides of the substrate, and the fixed support beam 3 is fixed on the ground line 2 and shared The planar waveguide transmission line 1 is located below the fixed support beam 3; the mass block 4 is located above the fixed support beam 3, and the graphene piezoresistive block 9 is located between the coplanar waveguide transmission line 1 and the fixed support beam 3; one end of the graphene piezoresistive block 9 passes through the first A transmissi...
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The invention relates to a microwave power sensor based on a graphene piezoresistive effect. The sensor comprises a substrate, a coplanar waveguide transmission line, a mass block, a fixed support beam and a graphene piezoresistive block. The middle portion of the substrate is provided with the coplanar waveguide transmission line and two sides of the substrate are provided with ground lines. Thefixed support beam is fixed to the ground lines and the coplanar waveguide transmission line is located below the fixed support beam. The mass block is located above the fixed support beam. The graphene piezoresistive block is located between the coplanar waveguide transmission line and the fixed support beam. One end of the graphene piezoresistive block is connected to a current input port through a first transmission line. The other end of the graphene piezoresistive block is connected to a current output port through a second transmission line. By using the sensor, through using the piezoresistive effect of graphene, sensor sensitivity is greatly increased; and because of a special structure of a graphene zero band gap, precision of microwave signal detection power and system stabilitycan be increased. And simultaneously, the sensor has advantages of a small size, convenient integration, a simple structure and the like.
Description
technical field [0001] The invention belongs to the technical field of microwave power sensors, in particular to a microwave power sensor based on graphene piezoresistive effect. Background technique [0002] In the research of microwave signal generation, transmission and reception, etc., the measurement of microwave power is an indispensable basic testing technology. At present, the most common microwave power sensor is a surface-level fixed beam structure. When a microwave signal enters, an electrostatic force will be generated to bend the fixed beam, resulting in a change in capacitance and finally obtaining microwave power. However, the output of the capacitive microwave power sensor is nonlinear, and its parasitic capacitance and distributed capacitance have a great influence on the sensitivity and measurement accuracy, and the structure of the fixed beam in the existing sensor structure design is not stable enough, the anti-overload ability is poor, and the sensitivit...
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IPC IPC(8): G01R21/10
Inventor 李龙飞李方清王德波
Owner NANJING UNIV OF POSTS & TELECOMM