An MEMS bridge structure and a forming method thereof
A technology of bridge structure and laminated structure, which is applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problems of bridge warpage, affecting packaging and testing, etc., and achieve the goal of reducing bridge warpage and preventing bridge warpage Effect
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Embodiment 1
[0027] refer to figure 2 , figure 2 Shown is a schematic diagram of the MEMS bridge structure layer of the present invention. The MEMS bridge structure is characterized in that it at least includes: a substrate 01; a titanium-containing thin film layer 02 located on the substrate 01; a silicon oxide thin film layer 03 located on the titanium-containing thin film layer 02; Composite film layer on film layer 03. Preferably in the present invention, the substrate is a silicon substrate, or a silicon dioxide film layer or an amorphous silicon film layer. In this embodiment, preferably, the substrate is a silicon dioxide film layer. In this embodiment, preferably, the titanium-containing thin film layer 02 on the substrate 01 contains titanium and titanium nitride, that is, the titanium-containing thin film layer 02 is composed of a mixture of titanium and titanium nitride. Further, the thickness of the titanium-containing thin film layer is 100 angstroms to 200 angstroms. F...
Embodiment 2
[0035] refer to figure 2 , figure 2 Shown is a schematic diagram of the MEMS bridge structure layer of the present invention. The MEMS bridge structure is characterized in that it at least includes: a substrate 01; a titanium-containing thin film layer 02 located on the substrate 01; a silicon oxide thin film layer 03 located on the titanium-containing thin film layer 02; Composite film layer on film layer 03. Preferably in the present invention, the substrate is a silicon substrate, or a silicon dioxide film layer or an amorphous silicon film layer. In this embodiment, preferably, the substrate is a silicon dioxide film layer.
[0036] The difference between the second embodiment and the first embodiment is that the titanium-containing film layer 02 on the substrate 01 is a titanium nitride film layer, that is to say, the titanium-containing film layer 02 is only composed of a titanium nitride material constitute. Further, the thickness of the titanium-containing thin fi...
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