Spherical box-shaped three-dimensional detector and preparation method thereof

Abstract

The invention discloses a spherical box-shaped three-dimensional detector and a preparation method thereof. The detector is formed by arranging a plurality of detecting units with cylindrical shapes.The detecting units comprise hollow bases, oxide layers a are attached to the bottoms of the bases, shell-shaped electrodes with hollow hemispheres are fixed in the bases, the shell-shaped electrodesare filled with semiconductor substrates, central collecting electrodes with solid hemispheres are embedded in the middles of the tops of the semiconductor substrates, metal layers are attached to thetops of the central collecting electrodes and the shell electrodes, and oxide layers b are attached to the tops of the semiconductor substrates. The internal electric field is uniform during the operation of the detector, current signals have no long tail and do not interfere with each other, the energy resolution of the detector is raised, the overall size of the detecting units of the inventionis small, the depletion voltage, junction capacitance and leakage current are very small, the noise is low, the position resolution of the detector is improved, the detector can be adapted to a battery for driving, and the detector is easy to carry.

Description

technical field [0001] The invention belongs to the technical fields of high-energy physics, astrophysics, aerospace, military affairs and medicine, and relates to a spherical box-shaped three-dimensional detector and a preparation method thereof. Background technique [0002] The detector is mainly used in the fields of high-energy physics, astrophysics, aerospace, military, and medical technology. The electrodes of the three-dimensional detector are two N-type heavily doped columnar electrodes and two P-type heavily doped columnar electrodes located at the opposite corners. The electrodes, the applied voltage takes any value, the electric field at the geometric center point between the N-type heavily doped columnar electrode and the P-type heavily doped columnar electrode is zero, and there is a dead zone in the sensitive area inside the detector. [0003] The electrode of the traditional three-dimensional trench silicon detector does not penetrate the silicon body, and th...

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Problems solved by technology

[0003] The electrode of the traditional three-dimensional trench silicon detector does not penetrate the silicon body, and there is a silicon substrate with a thickness of 10% at the bottom of the detection unit. The silicon substrate only supports the silicon body, which makes the dead zone ratio of the detection unit larger. , due to the influence of a weak electric field in the silicon substrate, the particle drift speed is very small, and it is easy to be trapped by deep-level defects caused by strong radiation, which makes the charge collection efficiency of the three-dimensional trench silicon detector not good; the detection units are arranged to form a detector Finally, the electrical signal between each detector unit will affect other units through the silicon substrate, forming interference, resulting in a decrease in the energy resolution of the three-dimensional trench silicon detector; The detector capacitance is large, and the signal noise is large

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