Processing method for calculating aliasing phenomenon in photoetching system model

Abstract

The invention discloses a processing method for calculating an aliasing phenomenon in a photoetching system model, and the method comprises the steps of determining the number of sampling points for discrete sampling of a mask function according to an effective sampling range and a preset space sampling interval, wherein the mask function is used for representing the geometric shape of a mask; establishing an anti-aliasing filtering function according to the space sampling interval, wherein the anti-aliasing filtering function is used for limiting the bandwidth of the mask function in the frequency domain space; according to the anti-aliasing filtering function and the number of sampling points, carrying out the convolution operation for the anti-aliasing filtering function and the mask function, and obtaining the space sampling signals after the filtering of the mask function; and performing convolution operation on the space sampling signal and the kernel function to determine the light intensity distribution. In the application, the bandwidth of the mask function is limited by performing filtering sampling on the mask function through the anti-aliasing filter function, so that the light intensity calculation distortion caused by an aliasing phenomenon is avoided, and the accuracy of calculating the photoetching model can be improved.

Description

technical field [0001] The present application belongs to the technical field of semiconductor lithography, and in particular relates to a method for processing aliasing phenomena in computational lithography system models. Background technique [0002] Smart devices are inseparable from today's life, and smart phones, smart homes and smart wearable devices are generally related to everyone. The operation of smart devices is more of the silent operation of the chip behind the scenes. At present, in the production process of chips, the lithography technology, which is the key technology in chip production, uses the principle of photochemical reaction to transfer the pattern designed in advance on the mask to a wafer substrate, so that etching and ion implantation become possible. Diffraction occurs when light is irradiated on the mask, and the light of different diffraction orders converges on the surface of the photoresist. This process is an optical process; the image on ...

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Problems solved by technology

[0005] This application provides a processing method for calculating the aliasing phenomenon in the lithography system model, which can be used to solve the problem of freq...

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