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Measuring point compensation value calculation method, device and equipment

A calculation method and a technology of a calculation device, which are applied in the directions of calculation, semiconductor/solid-state device testing/measurement, special data processing applications, etc., can solve the problem of long time required for completion, and achieve reduction of overall time length, optimization of alignment compensation values ​​and Accurate, less-repeated effects

Active Publication Date: 2019-07-09
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since there are many different compensation items at present, different alignment patterns need to be measured in batches, and then different compensation value parameters are calculated individually, and the entire procedure takes a long time to complete.

Method used

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  • Measuring point compensation value calculation method, device and equipment
  • Measuring point compensation value calculation method, device and equipment
  • Measuring point compensation value calculation method, device and equipment

Examples

Experimental program
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Embodiment 1

[0057] see figure 1 , which is a flow chart of the steps of the method for calculating the compensation value of the measurement point according to the embodiment of the present invention. The first embodiment provides a method for calculating the compensation value of the measurement point, including the following steps:

[0058] S110: Determine multiple measurement points in multiple measurement patterns, and acquire initial values ​​of the measurement points.

[0059] In this step, different measurement patterns are combined, and then all the measurement patterns are measured in one measurement to obtain the required measurement value.

[0060] S120: Set a first measurement point group from the measurement points in the measurement pattern, and calculate a first compensation value according to initial values ​​of the measurement points in the first measurement point group.

[0061] In this step, the required specific measurement points are captured as required to form a f...

Embodiment 2

[0067] Such as figure 2 As shown, it is a connection block diagram of the calculation device of the compensation value of the measurement point in the embodiment of the present invention. The second embodiment provides a calculation device for the compensation value of the measurement point, including:

[0068] The combined measurement module 110 is configured to determine multiple measurement points in multiple measurement patterns, and obtain initial values ​​of the measurement points.

[0069] The first setting module 120 is configured to set a first measurement point group from the measurement points in the measurement pattern, and calculate a first compensation value according to the initial values ​​of the measurement points in the first measurement point group. Wherein, the first measurement point group may include known measurement points, and an overall linear compensation value is calculated.

[0070] The compensation module 130 is configured to compensate the ini...

Embodiment 3

[0076] Implementation 3 of the present invention also provides a calculation device for the compensation value of the measurement point, such as Figure 4 As shown, the computer device includes: a memory 210 and a processor 220 , and the memory 210 stores computer programs that can run on the processor 220 . When the processor 220 executes the computer program, the method for calculating the compensation value of the measurement point in the above-mentioned embodiments is implemented. The number of the memory 210 and the processor 220 may be one or more.

[0077] The device also includes:

[0078] The communication interface 230 is used to communicate with external devices for interactive data transmission.

[0079] The memory 210 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one magnetic disk memory.

[0080] If the memory 210, the processor 220, and the communication interface 230 are implemented in...

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Abstract

The invention provides a measuring point compensation value calculation method. The method comprises the following steps: determining a plurality of measuring points in a plurality of patterns to be measured, and acquiring initial values of the measuring points; setting a first measuring point group among the measuring points in the patterns to be measured, and calculating first compensation values according to the initial values of the measuring points in the first measuring point group; carrying out compensation on the initial values of the measuring points in the first measuring point groupaccording to the first compensation values, so that calibration values of the measuring points are obtained; setting a second measuring point group among the measuring points in the patterns to be measured; and when the second measuring point group intersects with the first measuring point group, returning from the calibration values of the measuring points of an intersection part to the initialvalues of the measuring points, and calculating second compensation values according to the initial values of the measuring points in the second measuring point group. The method provided by the invention has the advantages that the different patterns are combined for measuring through one step, and the compensation values of the different groups are then calculated, so that the number of measuring times can be reduced, and an overall measuring duration can be shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a calculation method, device and equipment for compensation values ​​of measurement points. Background technique [0002] The photolithography process is used in the semiconductor manufacturing process. The photolithography process is to transfer the circuit structure in the form of a pattern on the mask (Mask) to the surface of the wafer coated with photoresist through steps such as alignment, exposure, and development, so that A layer of photoresist masking pattern is formed on the circular surface. [0003] Semiconductor devices are made up of many overlapping layers of circuits, so dozens of photolithography steps are required. It is necessary to ensure that each layer is aligned with the front and rear layers, that is, overlay. Overlay errors will directly affect the quality of semiconductor devices. performance, or even cause a short circuit to cause de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G06F17/50
CPCH01L22/20G06F30/20
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC