Memories and methods of operation and formation thereof

Abstract

A memory and its working method and formation method, wherein, the memory includes: a substrate; a first well region located in the substrate, the first well region has first dopant ions; In the second well region on the top surface of the first well region, there are second dopant ions in the second well region, and the conductivity type of the second dopant ions is opposite to that of the first dopant ions; The gate structure on the surface of the second well region; the doped region in the second well region located on one side of the gate structure, the doped region has third doping ions, and the conductivity of the third doping ions The type is opposite to the conductivity type of the second dopant ions. The memory has a simple structure and a high degree of integration.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a memory and its working method and forming method. Background technique [0002] With the development of information technology, the amount of stored information has increased dramatically. The increase in the amount of stored information has promoted the rapid development of the memory, and at the same time put forward higher requirements for the performance of the memory. [0003] Since the static memory (SRAM) can save the data stored in it without refreshing the circuit, and the power consumption is small, the application of the SRAM is more and more extensive. A traditional SRAM storage unit generally consists of six MOS transistors or four MOS transistors, and the number of MOS transistors in the storage unit is large, resulting in a large volume of the MOS transistors. In order to reduce the size of the memory and improve the integration level, a sin...

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Problems solved by technology

[0004] However, the integration level of existing single-transistor SRAMs is still low

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