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Method for rapidly improving perpendicular magnetic anisotropy

An anisotropic, perpendicular magnetic technology, applied in the manufacture/processing of magnetic field-controlled resistors, electromagnetic devices, etc., can solve problems such as high production costs and processes, and achieve good vertical magnetic anisotropy

Active Publication Date: 2019-07-16
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a method for rapidly improving the perpendicular magnetic anisotropy, which solves the technical defects in the prior art that need to be improved through the design of the film layer structure and high-temperature, long-time annealing and high production cost processes, and only requires a simple film Layer structure design and corresponding low temperature rapid annealing process can effectively improve

Method used

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  • Method for rapidly improving perpendicular magnetic anisotropy
  • Method for rapidly improving perpendicular magnetic anisotropy
  • Method for rapidly improving perpendicular magnetic anisotropy

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Thin Film Magnetic Heterojunction Material Ta(1nm) / Co 40 Fe 40 B 20 (0.5nm) / MgO(1nm) / Ta(1nm) is deposited at room temperature by magnetron sputtering equipment, the substrate is a silicon dioxide substrate (22mm×22mm), and the vacuum degree of the sputtering background is 3 ×10 -7 Torr, the working pressure of argon during the sputtering process was kept at 4.0×10 -3 Torr, Ta Target and Co 40 Fe 40 B 20 The target is DC sputtering, the sputtering current is 150mA and 100mA, the sputtering rate is 0.083nm / s and 0.049nm / s respectively, the MgO target is radio frequency sputtering, the sputtering voltage is 100W, and the sputtering rate is 0.02nm / s s;

[0033] The purity of the targets used are all better than 99.99%. The sample heat treatment process is carried out in a vacuum annealing furnace. No external magnetic field is added during the annealing process. The annealing temperature is 300 ° C and the annealing time is 30s. Thin-film magnetic heterojunction mat...

Embodiment 2

[0048] Thin Film Magnetic Heterojunction Material Ta(2nm) / Co 40 Fe 40 B 20 (0.7nm) / MgO(1.2nm) / Ta(1.5nm) is deposited at room temperature by magnetron sputtering equipment, the substrate is a silicon dioxide substrate (22mm×22mm), the sputtering background vacuum 1×10 -7 Torr, the working pressure of argon during the sputtering process was kept at 4.0×10 -3 Torr, Ta Target and Co 40 Fe 40 B 20 The target is DC sputtering, the sputtering current is 150mA and 100mA, the sputtering rate is 0.083nm / s and 0.049nm / s respectively, the MgO target is radio frequency sputtering, the sputtering voltage is 100W, and the sputtering rate is 0.02nm / s s;

[0049] The purity of the targets used is better than 99.99%. The sample heat treatment process is carried out in a vacuum annealing furnace. No external magnetic field is added during the annealing process. Thin-film magnetic heterojunction materials.

Embodiment 3

[0051] Thin Film Magnetic Heterojunction Material Ta(3nm) / Co 40 Fe 40 B 20 (1nm) / MgO(1.5nm) / Ta(2nm) is deposited at room temperature by magnetron sputtering equipment, the substrate is a silicon dioxide substrate (22mm×22mm), and the vacuum degree of the sputtering background is 5 ×10 -7 Torr, the working pressure of argon during the sputtering process was kept at 4.0×10 -3 Torr, Ta Target and Co 40 Fe 40 B 20 The target is DC sputtering, the sputtering current is 150mA and 100mA, the sputtering rate is 0.083nm / s and 0.049nm / s respectively, the MgO target is radio frequency sputtering, the sputtering voltage is 100W, and the sputtering rate is 0.02nm / s s;

[0052] The purity of the targets used is better than 99.99%. The sample heat treatment process is carried out in a vacuum annealing furnace. No external magnetic field is added during the annealing process. The annealing temperature is 300 ° C and the annealing time is 50s. Thin-film magnetic heterojunction material...

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Abstract

The invention provides a method for rapidly improving perpendicular magnetic anisotropy, and belongs to the technical field of a magnetic material. The method comprises the steps of firstly, performing magnetron sputtering deposition in an argon environment under a room temperature by a magnetron sputtering device to prepare a CoFeB / MgO-structure thin film magnetic heterojunction material; rapidlyannealing the prepared thin film magnetic heterojunction material in an ultrahigh vacuum reaction device; and finally, obtaining the thin film magnetic heterojunction material with favorable perpendicular magnetic anisotropy. By rapidly annealing the simple film layer-structure thin film magnetic heterojunction material Ta (1-5 nanomters) / Co40Fe40B20 (0.5-1.4 nanometer) / MgO (1-2 nanometers) / Ta (1-3 nanometers) under ultrahigh vacuum of (1*10<-7>-9*10<-7>)Torr at a temperature range being 250-350 degrees for 30-60 seconds, charges are subjected to instantaneous orbital hybridization under a high temperature at a CoFeB / MgO interface, so that favorable perpendicular magnetic anisotropy is obtained; and the operation method is simple and practical and is suitable for production of the large-scale continuous thin film magnetic heterojunction material having favorable perpendicular magnetic anisotropy.

Description

technical field [0001] The invention relates to the technical field of magnetic materials, in particular to a method for rapidly improving perpendicular magnetic anisotropy. Background technique [0002] Compared with the traditional complementary metal-oxide-semiconductor memory, static memory and dynamic memory, the spin-transfer torque magnetic random access memory has non-volatility, almost unlimited write times, fast read and write speed, high storage capacity and high performance. Due to its advantages of low power consumption, it is considered to be an ideal device for building the next generation of non-volatile memory. [0003] The commonly used materials for spin-transfer torque magnetic random access memory mainly include heterogeneous magnetoresistance materials, such as: magnetic heterojunction materials based on CoFeB / MgO structure. Compared with traditional rare earth / transition metal alloys (TbFeCo, GdFeCo, SmCo ), L10 ordered phase (Co, Fe)-Pt alloy and Co / ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/08H10N50/01H10N50/10
CPCH10N50/01H10N50/10
Inventor 于广华冯春徐秀兰
Owner UNIV OF SCI & TECH BEIJING
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