Preparation method of spherical CsPbX3@SiO2 quantum dot with high stability and water solubility

A high-stability, water-soluble technology, applied in chemical instruments and methods, nanotechnology, nano-optics, etc., can solve the problems of poor stability and water solubility, limiting the application of luminescent materials, etc., and achieve the effect of improving stability and water solubility

Inactive Publication Date: 2019-07-19
UNIV OF JINAN
View PDF1 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its poor stability and water solubility severely limit its application as a luminescent material in biological and aqueous environments.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of spherical CsPbX3@SiO2 quantum dot with high stability and water solubility
  • Preparation method of spherical CsPbX3@SiO2 quantum dot with high stability and water solubility
  • Preparation method of spherical CsPbX3@SiO2 quantum dot with high stability and water solubility

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0017] (1) Weigh 0.08g of cesium carbonate and add it to a mixed solution containing 3mL of octadecene and 0.25mL of oleic acid, and heat to 150°C under a nitrogen atmosphere until the cesium carbonate is completely dissolved;

[0018] (2) Accurately weigh 68.9mg of PbBr 2 Add it into a mixed solution containing 5mL octadecene, 0.5mL oleic acid and 5mL oleylamine, heat to 180°C under a nitrogen atmosphere, and the heating rate is 4°C / min, to PbBr 2 completely dissolved;

[0019] (3) Measure 0.4mL of the cesium oleate solution in step (1) and quickly add it dropwise to the solution in step (2), react for 6s, quickly cool to room temperature in ice bath, and centrifuge, wash, and vacuum dry the product to obtain CbBr 3 quantum dots;

[0020] (4) Weigh 16 mg of CsPbbr obtained in step (3) 3 The quantum dots were evenly dispersed in 20 mL of toluene solution, 100 μL of TMOS and 70 μL of deionized water were added to it, and the reaction was fully reacted for 48 h at room tempe...

Embodiment example 2

[0022] The difference between this example and Example 1 is that 26.1 mg of PbCl is added in step (2) 2 and 34.5mg of PbBr 2 , all the other conditions are the same as in Example 1.

Embodiment example 3

[0024] The difference between this example and Example 1 is that 52.3 mg of PbCl is added in step (2) 2 , all the other conditions are the same as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a spherical CsPbX3@SiO2 (X=Cl, Br, I) quantum dot with high stability and water solubility. The preparation method adopts an improved thermal injectiontechnology and takes a CsPbX3 quantum dot as a precursor, and mainly comprises the following steps: adding tetramethyl orthosilicate (TMOS) or tetraethyl orthosilicate (TEOS) or a mixture of TMOS andTEOS into a toluene solution containing a trace amount of water, conducting full reacting for a certain time in a stirring state, and carrying out low-speed centrifugation, washing and drying on an obtained precipitate to obtain the high-stability water-soluble spherical CsPbX3@SiO2 (X=Cl, Br, I) quantum dot. Synthesis process is simplified, raw materials are simple, the cost is low, the process equipment requirement is low, other impurity elements are not introduced or generated in the preparation process, the method has the advantages that the purity of the product is improved, the environmental pollution is reduced, the stability and the water solubility of the prepared spherical CsPbX3@SiO2 (X=Cl, Br and I) quantum dot are greatly improved, and conditions are provided for application of full-inorganic perovskite quantum dots in biological and water-based environments.

Description

technical field [0001] The invention belongs to the field of semiconductor quantum dot luminescence, in particular to a highly stable, water-soluble spherical CsPbX 3 @SiO 2 (X=Cl, Br, I) preparation method of quantum dots. Background technique [0002] (1) All-inorganic perovskite quantum dots are a new type of luminescent material with high luminous efficiency and adjustable spectrum that has emerged in recent years. However, its poor stability and water solubility severely limit its application as a luminescent material in biological and aqueous environments. [0003] (2) SiO 2 With the advantages of stability, non-toxicity and low price, it has become the first choice for coating materials. Silica layer coating is to coat a layer of amorphous silica on the surface of quantum dots by hydrolysis of mercapto-containing organosilane, and on the surface of this layer of silica, other molecules can be further modified, so that Significantly improved water solubility and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K11/02C09K11/66B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/025C09K11/665
Inventor 王文志李金凯刘宗明
Owner UNIV OF JINAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap