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A lateral Schottky gate bipolar transistor and method of making the same

A technology of bipolar transistors and Schottky gates, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of insufficient stability of devices and high process difficulty, and achieve the effect of enhancing stability and eliminating latch-up effects

Active Publication Date: 2021-04-13
XIDIAN UNIV
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  • Abstract
  • Description
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Problems solved by technology

At present, the process of LIGBT devices with wide bandgap semiconductor materials is relatively difficult, and the device may not be stable due to the latch-up effect

Method used

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  • A lateral Schottky gate bipolar transistor and method of making the same

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Embodiment Construction

[0036] The present invention will be described below by taking an N-channel LSGBT as an example in conjunction with the accompanying drawings.

[0037] Such as figure 1 As shown, this example includes:

[0038] P-type substrate 801 of wide bandgap semiconductor material;

[0039] The N-type epitaxial layer of wide bandgap semiconductor material formed on the upper surface of the P-type substrate 801 is denoted as N-type epitaxial layer 802;

[0040] An N-type buffer region 106 formed in the upper right end region of the N-type epitaxial layer 802, and a P-type drain region 105 formed inside the N-type buffer region 106;

[0041] N-type source region 104 formed in the upper left end region of N-type epitaxial layer 802;

[0042] The source 101 is located on the upper surface of the N-type source region 104;

[0043] The drain 102 is located on the upper surface of the P-type drain region 105;

[0044] A gate groove formed on the top of the N-type epitaxial layer 802 by usi...

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Abstract

The present invention provides a lateral Schottky gate bipolar transistor (LSGBT) and a fabrication method thereof. The LSGBT device combines the source and drain regions of the LIGBT structure with the Schottky gate of the MESFET structure, using the Schottky gate instead of the insulating gate, and its gate structure is similar to the trench gate structure of the conventional MESFET, while the rest is the same as the conventional The LIGBT structure is similar. Compared with LIGBT, there is no parasitic NPN transistor structure in the LSGBT device structure, which is conducive to eliminating the latch-up effect and enhancing the stability of the device; the gate control method is changed from an insulated gate to a Schottky gate, which can not only reduce the gate process It solves the oxidation problem of wide-bandgap semiconductor materials, and also retains the advantages of voltage-controlled devices, that is, high input impedance. The LSGBT device is especially suitable for low voltage and high current fields.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a lateral gate-controlled bipolar transistor. Background technique [0002] Power semiconductor devices refer to high-power electronic devices mainly used in power conversion and control circuits of power equipment. With the rapid development of power electronics technology, power semiconductor devices have been widely used in modern industrial control and national defense equipment. [0003] Lateral insulated gate bipolar transistor (LIGBT, Lateral insulated gate bipolartransistor) is a very suitable power device for high voltage power supply IC (HVIC) because it combines high input impedance and bipolar current conduction, while lateral device is easy to integrate, and Its process is compatible with that of traditional complementary MOS (CMOS) chips. In recent years, the optimization of the characteristics of LIGBT devices is mainly to study LIGBT devices with low s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L29/47H01L29/73H01L29/735H01L21/331H01L21/28
CPCH01L29/401H01L29/42304H01L29/47H01L29/6625H01L29/66257H01L29/7308H01L29/735
Inventor 段宝兴孙李诚王彦东杨银堂
Owner XIDIAN UNIV