Preparation method of porous indium oxide/indium sulfide heterogeneous junction material

A technology of indium oxide and indium sulfide, which is applied in the field of preparation of porous indium oxide/indium sulfide heterojunction materials, can solve problems such as restricting large-scale application and complex de-templated process experimental conditions, and achieves a simple, easy-to-operate and good preparation method. The effect of photocatalytic activity

Inactive Publication Date: 2019-07-23
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods usually require complex detemplating procedures or strict experimental conditions, which severely restrict their large-scale applications.

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  • Preparation method of porous indium oxide/indium sulfide heterogeneous junction material
  • Preparation method of porous indium oxide/indium sulfide heterogeneous junction material
  • Preparation method of porous indium oxide/indium sulfide heterogeneous junction material

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[0033] The invention provides a method for preparing a porous indium oxide / indium sulfide heterojunction material, comprising the following steps:

[0034] (1) mixing polyvinylpyrrolidone, indium nitrate and water to obtain a precursor solution;

[0035] (2) The precursor solution obtained in the step (1) is subjected to freezing treatment and deicing treatment in sequence to obtain a polyvinylpyrrolidone / indium nitrate hybrid material with a porous structure;

[0036] (3) Calcining the porous polyvinylpyrrolidone / indium nitrate hybrid material obtained in the step (2) to obtain porous indium oxide;

[0037] (4) After the porous indium oxide obtained in the step (3) is mixed with L-cysteine ​​and water, a hydrothermal reaction is performed to obtain a porous indium oxide / indium sulfide heterojunction material.

[0038] In the present invention, all raw materials are commercially available unless otherwise specified.

[0039] The invention mixes polyvinylpyrrolidone, indium n...

Embodiment 1

[0057] (1) Add 2g In(NO 3 ) 3 Dissolve in 100 mL of deionized water, then add 5 g of polyvinylpyrrolidone (abbreviated as PVP), and stir magnetically at a speed of 600 r / min for 8 h to obtain a precursor solution.

[0058] (2) Inject the precursor solution into a 5mL centrifuge tube, immerse it vertically in -196°C liquid nitrogen at a certain speed, keep it for 15min, and then transfer it to a vacuum freeze dryer. Keeping it under the condition for 48h, the porous structure PVP / In(NO 3 ) 3 hybrid materials.

[0059] (3) PVP / In(NO 3 ) 3 The hybrid material was placed in a muffle furnace, and the heating rate during the whole process was 1°C / min, from room temperature to 300°C, kept in the air for 1h, then raised from 300°C to 550°C, and kept for 2h, and then naturally down to room temperature, the porous In 2 o 3 Material.

[0060] (4) Dissolve 0.0625 mmol of L-cysteine ​​in 20 mL of deionized water, and then add 20 mg of porous In 2 o 3 , kept for 1 h, then the mix...

Embodiment 2

[0063] (1) Add 2g In(NO 3 ) 3 and 10 g of PVP were dissolved in 100 mL of deionized water, and magnetically stirred at a speed of 700 r / min for 12 h to obtain a precursor solution.

[0064] (2) Inject the precursor solution into a 5mL centrifuge tube, immerse it vertically in liquid nitrogen at -196°C at a certain speed, keep it for 10min, and then transfer it to a vacuum freeze dryer. Keeping it under the condition for 40h, the porous structure PVP / In(NO 3 ) 3 hybrid materials.

[0065] (3) PVP / In(NO 3 ) 3 The hybrid material was placed in a muffle furnace, and the heating rate during the whole process was 1°C / min, from room temperature to 300°C, kept in the air for 1h, then raised from 300°C to 550°C, and kept for 2h, and then naturally down to room temperature, the porous In 2 o 3 Material.

[0066] (4) Dissolve 0.125mmol L-cysteine ​​in 20mL deionized water, then add 20mg porous In 2 o 3 , kept for 1.5h, then the mixed solution was transferred to an autoclave, a...

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Abstract

The invention provides a preparation method of porous indium oxide / indium sulfide heterogeneous junction material, belonging to the field of porous inorganic materials. The preparation method includesthe following steps: mixing polyvinylpyrrolidone, indium nitrate and water to form a precursor solution; freezing and deicing the precursor solution successively to obtain porous polyvinylpyrrolidone / indium nitrate hybrid material; calcining the porous polyvinylpyrrolidone / indium nitrate hybrid material to obtain porous indium oxide; and mixing porous indium oxide with L-cysteine and water and carrying out hydrothermal reaction, thereby obtaining the porous indium oxide / indium sulfide heterogeneous junction material. The preparation method provided by the invention is simple and easy to operate, and the product prepared by the method has better photocatalytic activity.

Description

technical field [0001] The invention relates to the field of porous inorganic materials, in particular to a method for preparing a porous indium oxide / indium sulfide heterojunction material. Background technique [0002] In recent years, the energy crisis and environmental pollution have attracted widespread attention. As a new technology that is clean, efficient, environmentally friendly and can directly utilize solar energy, photocatalytic technology provides an effective way to solve the above problems. Photocatalytic technology not only shows great application potential in energy problems such as hydrogen production and carbon dioxide reduction, but also plays an important role in pollution treatment such as degradation of organic pollutants and reduction of heavy metals. Therefore, photocatalytic technology has always been the focus of scientific research workers. [0003] Indium oxide (In 2 o 3 ), as an important visible light photocatalyst, has a narrow bandgap wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J35/10B01J37/32B01J37/08B01J37/10C02F1/30C02F101/34C02F101/36C02F101/38
CPCB01J27/04B01J35/004B01J35/1014B01J35/1038B01J37/08B01J37/10B01J37/32C02F1/30C02F2101/308C02F2101/34C02F2101/36C02F2101/38C02F2305/10
Inventor 李晓伟邵长路李冰李兴华刘益春
Owner NORTHEAST NORMAL UNIVERSITY
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