Display panel and fabrication method thereof
A technology for display panels and preparation steps, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of poor water and oxygen blocking effect, low screen ratio, poor packaging effect of packaging film, etc. The effect of improving screen ratio, prolonging service life and enhancing performance
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Embodiment 1
[0044] like figure 1 As shown, this embodiment provides a method for manufacturing a display panel, including steps S101-S107.
[0045] S101 substrate setting step, the substrate setting step includes steps S111~S113 (see figure 2 ), S111 substrate layer preparation step, prepare a substrate layer 2 on the upper surface of the substrate 1, the substrate layer 2 is made of polyimide (PI) or other buffer material, which plays the role of buffer protection. S112 TFT layer preparation step, preparing a TFT layer 3 on the upper surface of the substrate layer 2 . S113 opening step, opening holes downward on the upper surface of the thin film transistor layer 3 to form a through hole 31 (see image 3 ), the inner diameter of the through hole 31 gradually decreases from top to bottom, presenting a platform-shaped through hole structure.
[0046] S102 photoresist preparation step, preparing a photoresist 4 in the through hole 31, the photoresist preparation step includes steps S121-S...
Embodiment 2
[0066] like Figure 11 As shown, this embodiment provides a method for manufacturing a display panel, including steps S201-S207.
[0067] S201 substrate setting step, the substrate setting step includes steps S211 to S213 (see Figure 12 ), S211 substrate layer preparation step, prepare substrate layer 2 on the upper surface of substrate 1, the material of substrate layer 2 is polyimide (PI) or other buffer material, play the effect of buffer protection. Step S212 of preparing a thin film transistor layer, preparing a thin film transistor layer 3 on the upper surface of the substrate layer 2 . S213 opening step, opening holes downward on the upper surface of the thin film transistor layer 3 to form through holes 31 (see image 3 ), the inner diameter of the through hole 31 gradually decreases from top to bottom, presenting a platform-shaped through hole structure.
[0068] S202 photoresist preparation step, preparing photoresist 4 in the through hole 31, the photoresist pre...
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