Display panel and manufacturing method thereof
A technology for display panels and preparation steps, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low screen ratio, poor encapsulation effect of the encapsulation film layer, and poor water and oxygen blocking effect, etc. Screen-to-body ratio, enhanced performance, and extended service life
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0044] like figure 1 As shown, this embodiment provides a method for manufacturing a display panel, including steps S101-S107.
[0045] S101 substrate setting step, the substrate setting step includes steps S111~S113 (see figure 2 ), S111 substrate layer preparation step, prepare a substrate layer 2 on the upper surface of the substrate 1, the substrate layer 2 is made of polyimide (PI) or other buffer material, which plays the role of buffer protection. S112 TFT layer preparation step, preparing a TFT layer 3 on the upper surface of the substrate layer 2 . S113 opening step, opening holes downward on the upper surface of the thin film transistor layer 3 to form a through hole 31 (see image 3 ), the inner diameter of the through hole 31 gradually decreases from top to bottom, presenting a platform-shaped through hole structure.
[0046] S102 photoresist preparation step, preparing a photoresist 4 in the through hole 31, the photoresist preparation step includes steps S121-S...
Embodiment 2
[0066] like Figure 11 As shown, this embodiment provides a method for manufacturing a display panel, including steps S201-S207.
[0067] S201 substrate setting step, the substrate setting step includes steps S211 to S213 (see Figure 12 ), S211 substrate layer preparation step, prepare substrate layer 2 on the upper surface of substrate 1, the material of substrate layer 2 is polyimide (PI) or other buffer material, play the effect of buffer protection. Step S212 of preparing a thin film transistor layer, preparing a thin film transistor layer 3 on the upper surface of the substrate layer 2 . S213 opening step, opening holes downward on the upper surface of the thin film transistor layer 3 to form through holes 31 (see image 3 ), the inner diameter of the through hole 31 gradually decreases from top to bottom, presenting a platform-shaped through hole structure.
[0068] S202 photoresist preparation step, preparing photoresist 4 in the through hole 31, the photoresist pre...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com