Magnetic random access memory cell and manufacturing method thereof

Abstract

The invention provides a magnetic random access memory cell and a manufacturing method thereof. The magnetic random access memory cell comprises a bottom electrode through hole layer, a space layer, aseed layer, a vertical magnetic reference layer, a tunnel barrier layer, a magnetic memory layer, an oxide covering layer, a metal top covering layer, an etching barrier layer, and a hard mask layer.The manufacturing method comprises the following steps of (1) depositing the film layers; (2) patterning the memory unit, etching the hard mask layer and stopping at the etching barrier layer; (3) etching the rest film layers; (4) covering an etched magnetic tunnel junction unit with a dielectric protection layer, filling a dielectric filling layer, and grinding the surface; and (5) and finally forming a top electrode through hole layer on the flattened magnetic tunnel junction unit. According to the magnetic random access memory cell, the metal space layer is added under the magnetic reference layer, so that the relative position of the magnetic reference layer is heightened, so as to better completely etch the multi-layer of the magnetic materials, and the memory unit has a better read-write function and the yield of the product.

Description

technical field [0001] The invention relates to a magnetic random access memory (MRAM, Magnetic Radom Access Memory) memory unit and a manufacturing method thereof, belonging to the technical field of magnetic random access memory manufacturing. Background technique [0002] In recent years, MRAM using Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which includes: a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, Its magnetization direction does not change. [0003] In order to record information in this magnetoresistive element, it is suggested to use a writing method based on spin-momentum tra...

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is: the etching process of the magnetoresistive multilayer film is relatively difficult, and it is inevitable to leave some magnetic fixed reference layers (for BOTTOM-PINNED MR

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