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Vertical cavity surface emitting laser and method of manufacturing the same

A technology of vertical cavity surface emission and fabrication method, applied in the field of vertical cavity surface emitting lasers, can solve the problems of similar refractive index and low light extraction efficiency of VCSEL, etc.

Active Publication Date: 2020-07-07
HC SEMITEK SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Embodiments of the present invention provide a vertical cavity surface emitting laser and a manufacturing method thereof, which can solve the problems of the prior art that the upper DBR and the lower DBR have similar refractive indices and the light extraction efficiency of the VCSEL is low

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  • Vertical cavity surface emitting laser and method of manufacturing the same
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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0032] An embodiment of the present invention provides a vertical cavity surface emitting laser. figure 1 A schematic structural diagram of a vertical cavity surface emitting laser provided by an embodiment of the present invention. see figure 1 , the vertical cavity surface emitting laser comprises a substrate 10, a lower reflective layer 21, a light emitting region 30, an upper reflective layer 22, an upper metal electrode 41 and a lower metal electrode 42, a lower reflective layer 21, a light emitting region 30, an upper reflective layer 22 and The upper metal electrode 41 is sequentially stacked on the first surface of the substrate 10 , the lower metal electrode 42 is disposed on the second surface of the substrate 10 , and the s...

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Abstract

The invention discloses a vertical cavity surface emitting laser and a manufacture method thereof, and belongs to the technical field of semiconductors. The vertical cavity surface emitting laser includes a substrate, a lower reflective layer, a light emitting region, an upper reflective layer, an upper metal electrode, and a lower metal electrode. The lower reflective layer, the light emitting region, the upper reflective layer, and the upper metal electrode are sequentially laminated on the first surface of the substrate, the lower metal electrode is arranged on the second surface of the substrate that is opposite to the first surface of the substrate. The lower reflective layer adopts a GaAs / AlAs superlattice structure or an AlGaAs / AlGaAs superlattice structure, and at least one layer of Ag island structure in an array distribution is inserted in the lower reflective layer. When the Ag island structure has two or more layers, the multiple layers of Ag island structures are insertedin the lower reflective layer at intervals. The vertical cavity surface emitting laser of the invention can improve the luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a vertical cavity surface emitting laser and a manufacturing method thereof. Background technique [0002] Vertical Cavity Surface Emitting Laser (English: Vertical Cavity Surface Emitting Laser, VCSEL for short) is a semiconductor device based on gallium arsenide semiconductor material that emits laser light perpendicular to the top surface. Different from light emitting diodes (English: Light Emitting Diode, referred to as: LED), laser diodes (English: LaserDiode, referred to as: LD) and other light sources that need to be tested after the completion of production, VCSEL can be tested at any stage of production And to deal with the problems found in the test in time can effectively avoid the waste of production process and processing time. Moreover, VCSEL has the advantages of small size, circular output spot, single longitudinal mode output, low threshold current, low ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/343
CPCH01S5/18305H01S5/18361H01S5/18375H01S5/3432
Inventor 郭炳磊王群葛永晖吕蒙普胡加辉李鹏
Owner HC SEMITEK SUZHOU
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