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Method for preparing uniform thick film SOI silicon wafer

A uniformity and silicon wafer technology, applied in the application field of thick film SOI silicon wafers, can solve the problems of poor film thickness uniformity, limited application fields, and high requirements for film thickness uniformity, so as to achieve good uniformity and improve film thickness uniformity , huge economic and social value

Active Publication Date: 2019-08-02
SHENYANG SILICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the film thickness uniformity is poor, only 10%
However, automotive electronics and power devices have high requirements for film thickness uniformity, which limits the application field of this preparation method, and its technical effect needs to be improved urgently.

Method used

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  • Method for preparing uniform thick film SOI silicon wafer
  • Method for preparing uniform thick film SOI silicon wafer
  • Method for preparing uniform thick film SOI silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] A method for preparing a homogeneous thick-film SOI silicon wafer, characterized in that: operate in accordance with the following requirements in sequence:

[0059] ①Select the SOI silicon wafer formed by TMSOI;

[0060] ② Remove the edge of TMSOI to ensure that the subsequent process grows into single crystal Si; the specific requirements are: if there is SiO2 on the edge of SOI, use edge chamfering to remove the edge SiO2 of clean TMSOI to ensure that the subsequent process grows into single crystal Si; if the SOI edge is Si, this step is omitted;

[0061] ③Remove all the surface damaged layer to obtain low-defect TMSOI; the specific requirements are: use chemical mechanical polishing to remove all the surface damaged layer through rough grinding, fine grinding and polishing to obtain low-defect TMSOI.

[0062] ④ Use wet cleaning to replace the surface of thin film SOI to remove surface impurities; the length of time required for long-term wet cleaning is: the chemi...

Embodiment 2

[0080] Using TM-SOI technology, three pieces of SOI wafer materials with a diameter of 200mm were prepared, and they were processed by CMP, and the surface damage layer was completely removed through rough grinding, fine grinding and polishing, and TMSOI with low defects was obtained. Then use chemical solutions SC1 and SC2 to perform 40Min wet cleaning to replace the surface of the thin film SOI to remove surface impurities. Then put it in the epitaxial furnace reaction chamber, the specific steps are as follows: raise the temperature to 1100°C, flow 80slm of hydrogen gas for 20s, and bake the surface to remove the oxide layer. Then heated to 1150° C., introduced 0.5 slm of HCl for chemical vapor polishing. After 10s, after blowing hydrogen to remove impurities and HCl, lower the temperature to 1050°C, evacuate to 40torr under low pressure, feed 400sccm SiH2Cl2, and deposit for 60s. Finally, stop the flow of SiH2Cl2, blow hydrogen to remove SiH2Cl2, turn off the silicon depo...

Embodiment 3

[0086]Using TM-SOI technology, three pieces of SOI wafer materials with a diameter of 200mm were prepared, and they were processed by CMP, and the surface damage layer was completely removed through rough grinding, fine grinding and polishing, and TMSOI with low defects was obtained. Then use chemical solutions SC1 and SC2 to perform 30Min wet cleaning to replace the surface of the thin film SOI to remove surface impurities. Then put it in the epitaxial furnace reaction chamber, the specific steps are as follows: raise the temperature to 1150°C, flow 60slm of hydrogen gas for 10s, and bake the surface to remove the oxide layer. 0.3 slm of HCl was introduced for chemical vapor polishing. After 15s, after blowing hydrogen to remove impurities and HCl, the temperature was lowered to 1100°C, and under normal pressure, 12g / min of SiHCl3 and 50sccm of PH3 were introduced for 300s of deposition. Finally, stop passing SiHCl3, blow hydrogen to remove SiHCl3, close the mixed atmosphere...

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Abstract

The invention relates to a method for preparing a uniform thick film SOI silicon wafer. The method comprises steps of 1, selecting an SOI silicon wafer; 2, edge treatment; 3, removing a surface damaged layer to obtain low-defect TMSOI; 4, wet cleaning; 5, HCl chemical etching to obtain the high quality film SOI silicon wafer; 6, deposition of the desired film; and 7, cooling. Compared with the prior art, SOI uniformity is lower than 3%, relatively good uniformity is achieved, moreover, the damage layer and roughness of the SOI top silicon surface after the TM-SOI process can be removed, the high quality thick film SOI is prepared, the preparation process is relatively simple, the technical effect is excellent, and the method has relatively large economic and social values that can be expected.

Description

[0001] Technical field: [0002] The invention relates to the technical field of application of thick-film SOI silicon wafers, and in particular provides a method for preparing uniform thick-film SOI silicon wafers. [0003] Background technique: [0004] SOI is a new type of silicon-based semiconductor material with a unique three-layer structure of "Si / insulator / Si". It realizes the full dielectric isolation of the device and the substrate through the insulating buried layer (usually SiO2), and has the advantages of small parasitic capacitance, fast operation speed, small leakage, and low power consumption. At the same time, it eliminates the latch-up effect and suppresses The interference of the pulse current of the substrate reduces the occurrence of soft errors. Therefore, SOI (Silicon On Insulator) is widely used. [0005] As a method of manufacturing thick-film SOI, it is usually realized by bonding, that is, an oxide film is formed on at least one of the two silicon w...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02005H01L21/02008H01L21/02013H01L21/02019
Inventor 党启森
Owner SHENYANG SILICON TECH
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