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Gallium oxide semiconductor and its preparation method

A gallium oxide, semiconductor technology, applied in the field of semiconductor thin film materials, can solve problems such as reduction and poor crystal orientation consistency

Active Publication Date: 2021-07-02
上海您惦半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But using Si(111) as the substrate to grow Ga 2 o 3 Thin films also face technical difficulties: in the initial stage of growth, it is easy to form a layer of amorphous silicon oxide on the surface of single crystal Si. The crystal orientation of this layer of amorphous silicon oxide is poor, which will seriously reduce the subsequent growth rate. Ga 2 o 3 film quality

Method used

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  • Gallium oxide semiconductor and its preparation method
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  • Gallium oxide semiconductor and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0063] Metal-organic chemical vapor deposition (MOCVD) method to prepare high-quality ε-Ga 2 o 3 Layered structure of semiconductor crystal film.

[0064] Step 1: cleaning the Si(111) substrate to remove the surface oxide layer.

[0065] Step 2: Deposit a 50nm AlN layer on the cleaned Si(111) substrate by using a magnetron sputtering method with a 99.99% AlN target; after the growth is completed, perform high-temperature annealing at 650° C. for half an hour on the AlN layer.

[0066] Step 3: The substrate is sent into the reaction chamber of the MOCVD equipment, and the tray is rotated at a speed of 750 rpm, ready for the epitaxial growth of the gallium oxide film.

[0067] Step 4: The temperature of the reaction chamber is raised to 550° C., and the pressure of the reaction chamber is controlled at 80 Torr.

[0068] Step 5: Immerse the bubble bottle filled with triethylgallium and deionized water in two constant temperature water tanks, control the temperature of the bubb...

Embodiment 2

[0074] Metal-organic chemical vapor deposition (MOCVD) method to prepare high-quality ε-Ga 2 o 3 Layered structure of semiconductor crystal film.

[0075] Step 1: cleaning the Si(111) substrate to remove the surface oxide layer.

[0076] Step 2: Send the cleaned substrate into the reaction chamber of the MOCVD equipment, raise the growth temperature to 1200°C and keep the temperature constant.

[0077] Step 3: Use hydrogen as the carrier gas, and feed trimethylaluminum (TMAl) and ammonia (NH 3 ), grow a 100nm AlN layer.

[0078] Step 4: Gradually reduce the flow rate of trimethylaluminum to 0 sccm, and at the same time gradually increase the flow rate of trimethylgallium (TMGa) to 60 sccm, and grow a 300nm AlGaN layer with a graded Al composition.

[0079] Step 5: stop the growth, take a sample after cooling down to room temperature, and complete the growth of the nitride insertion layer.

[0080] Step 6: The substrate is re-sent into the reaction chamber of the MOCVD equ...

Embodiment 3

[0089] Metal-organic chemical vapor deposition (MOCVD) method to prepare high-quality ε-Ga 2 o 3 Layered structure of semiconductor crystal film.

[0090] Step 1: cleaning the Si(111) substrate to remove the surface oxide layer.

[0091] Step 2: Deposit a 100nm GaN layer on the cleaned Si(111) substrate by magnetron sputtering using a 99.99% GaN target; after the growth is complete, perform high temperature annealing on the GaN layer at 600°C for half an hour.

[0092] Step 3: The substrate is sent into the reaction chamber of the MOCVD equipment, and the tray is rotated at a speed of 750 rpm, ready for the epitaxial growth of the gallium oxide film.

[0093] Step 4: The temperature of the reaction chamber is raised to 600° C., and the air pressure is controlled at 30 Torr.

[0094] Step 5: Immerse the bubbling bottles filled with triethylgallium and deionized water in a constant temperature water tank, and control the temperature of the two bubbling bottles to 25°C through t...

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Abstract

The invention provides a lamination structure capable of realizing high-quality gallium oxide semiconductor film on a silicon substrate and a corresponding preparation method. The stacked structure is sequentially stacked by a silicon substrate, a nitride insertion layer, and a gallium oxide semiconductor layer. The silicon substrate is a silicon substrate with a <111> crystal orientation; the nitride insertion layer is an alloy formed by one or more of aluminum nitride, gallium nitride, and indium nitride, and the crystal structure is hexagonal Wurtzite structure; the gallium oxide semiconductor layer is ε-phase or α-phase gallium oxide with hexagonal symmetry, and the thickness does not exceed 100 μm. The nitride insertion layer prevents the formation of an amorphous silicon oxide layer on the surface of the silicon substrate, effectively improves the crystallization quality of the upper layer of gallium oxide, and realizes high-quality silicon substrate gallium oxide heteroepitaxy.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film materials, and mainly relates to a lamination structure and a growth method required for realizing high-quality gallium oxide semiconductor on a silicon substrate. Background technique [0002] Gallium oxide (Ga 2 o 3 ) has an ultra-wide bandgap width of 4.7-5.4eV, which has the characteristics of critical breakdown electric field strength, therefore, Ga 2 o 3 Semiconductor is an ideal material for electronic devices, with the advantages of high voltage resistance, high temperature resistance, high device power, low heat loss, and small parasitic effects; especially in the ε-phase Ga 2 o 3 In ε-Ga due to the polarization effect and the existence of two-dimensional electron gas, 2 o 3 It can also be used to make high-frequency devices (AppliedPhysicsLetters, 112, 162101, 2018). Ga 2 o 3 There are five phases of β, ε, α, γ, and δ, among which the β phase is the stable phase, followed ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/04H01L29/24H01L21/02
CPCH01L21/02381H01L21/02433H01L21/02458H01L21/02565H01L21/02598H01L21/02609H01L29/04H01L29/045H01L29/24
Inventor 陈梓敏王钢陈伟驱
Owner 上海您惦半导体科技有限公司