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A gallium oxide semiconductor stack structure and its preparation method

A laminated structure, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reduced device working efficiency, high contact resistance of vertical structure devices, poor consistency of silicon oxide crystal orientation, etc. The effect of good electrical contact

Active Publication Date: 2020-09-04
上海您惦半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But using Si as the substrate to grow Ga 2 o 3 Thin films and the preparation of corresponding vertical structure devices face two difficulties: one is that a layer of amorphous silicon oxide is easily formed on the surface of single crystal Si in the early stage of growth, and the crystal orientation of this layer of amorphous silicon oxide is poor. , thus seriously reducing the subsequent growth of Ga 2 o 3 film quality; secondly, due to the Ga 2 o 3 Poor conductivity, it is difficult to form a good ohmic contact with n-type Si, which will cause the fabricated vertical structure device to have too high contact resistance, seriously reducing the working efficiency of the device

Method used

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  • A gallium oxide semiconductor stack structure and its preparation method
  • A gallium oxide semiconductor stack structure and its preparation method
  • A gallium oxide semiconductor stack structure and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Metal-organic chemical vapor deposition (MOCVD) method to prepare high-quality ε-Ga 2 o 3 Layered structure of semiconductor crystal film.

[0075] Step 1: Si(111) substrate 1 is cleaned to remove the surface oxide layer.

[0076] Step 2: Deposit a 100 nm gold insertion layer 102 on the cleaned Si(111) substrate 1 by electron beam evaporation.

[0077] Step 3: The substrate is sent into the reaction chamber of the MOCVD equipment, and the tray is rotated at a speed of 750 rpm, ready for the epitaxial growth of the gallium oxide film.

[0078] Step 4: The temperature of the reaction chamber is raised to 550° C., and the air pressure is controlled at 80 Torr.

[0079] Step 5: Immerse the bubble bottle filled with triethylgallium and deionized water in two constant temperature water tanks, control the temperature of the bubble bottle at 25°C and 25°C through the constant temperature water tank, and pass the mass flow meter and pressure gauge, Control the pressure of th...

Embodiment 2

[0085] Metal-organic chemical vapor deposition (MOCVD) method to prepare high-quality ε-Ga 2 o 3 Layered structure of semiconductor crystal film.

[0086] Steps 1-6 are the same as in Example 1.

[0087] Step 7: stop the carrier gas containing triethylgallium from flowing into the reaction chamber, keep the carrier gas of deionized water from flowing into the reaction chamber, reduce the growth pressure to 10 Torr, increase the growth temperature to 640°C, and keep it stable.

[0088]Step 8: Flow the argon carrier gas containing triethylgallium into the reaction chamber again, the flow rates are 20 sccm and 1500 sccm respectively; control the growth time, and grow 1000nm intrinsic ε-Ga on the substrate surface 2 o 3 High temperature layer 203A.

[0089] Step 9: stop the growth, take samples after cooling down to room temperature, and complete the preparation of high-quality gallium oxide epitaxial film.

[0090] see image 3 , silicon substrate intrinsic ε-Ga 2 o 3 Sch...

Embodiment 3

[0092] Metal-Organic Chemical Vapor Deposition (MOCVD) method to prepare high-quality α-Ga 2 o 3 Layered structure of semiconductor crystal film.

[0093] Step 1: Si(111) substrate 1 is cleaned to remove the surface oxide layer.

[0094] Step 2: Deposit a 100 nm aluminum metal insertion layer 302 on the cleaned Si(111) substrate 1 by thermal evaporation.

[0095] Step 3: Rapid annealing is used to anneal the metal aluminum for 20 minutes at 600° C. under a nitrogen atmosphere.

[0096] Step 4: Cool down to room temperature under a nitrogen atmosphere, and take out the sample.

[0097] Step 5: The substrate is sent into the reaction chamber of the CVD equipment, and the temperature of the reaction chamber is raised to 500° C. to prepare for the epitaxial growth of the gallium oxide film.

[0098] Step 6: Immerse the bubbling bottles containing triethylgallium, tetradimethylaminotin, and deionized water in three constant temperature water tanks, control the temperature of th...

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Abstract

The present invention provides a gallium oxide semiconductor laminated structure and a preparation method therefor. The laminated structure comprises a silicon substrate and a gallium oxide semiconductor layer grown on the silicon substrate; a metal interposed layer is provided between the silicon substrate and the gallium oxide semiconductor layer; the surface of the silicon substrate and a silicon (111) crystal plane form a deflecting angle of 0-10°; the metal interposed layer comprises one or more of cubic-phase tungsten, molybdenum, iridium, rhodium, vanadium, chromium, platinum, palladium, iron, nickel, copper, gold, silver and aluminum, or one or more of hexagonal-phase rhenium, ruthenium, hafnium, zirconium, titanium and cobalt; and the gallium oxide semiconductor layer comprises hexagonal symmetric ε-phase or α-phase gallium oxide, and the thickness does not exceed 50 μm. The metal interposed layer is introduced to solve the problem that it is hard to prepare a high-quality Ga 2O 3 crystal film on the Si substrate, and the gallium oxide semiconductor laminated structure can be used to prepare the semiconductor device with the vertical structure.

Description

technical field [0001] The invention belongs to the field of semiconductor material and device preparation, and mainly relates to a growth method capable of realizing high-quality gallium oxide semiconductor on a silicon substrate and a semiconductor device prepared based on the method. Background technique [0002] Gallium oxide (Ga 2 o 3 ) has five phases of β, ε, α, γ, and δ, among which the β phase is a stable phase, followed by the ε phase, followed by the α phase, and the γ and δ phases are less stable. Due to different phase Ga 2 o 3 Both have an ultra-wide band gap of 4.7-5.4eV and a high critical breakdown electric field, therefore, Ga 2 o 3 Semiconductor is an ideal electronic device material, which has the advantages of high voltage resistance, high temperature resistance, high device power, low heat loss, and small parasitic effect; especially in ε-Ga 2 o 3 In ε-Ga due to the polarization effect and the existence of two-dimensional electron gas 2 o 3 It ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L21/02
CPCH01L21/02172H01L21/02175H01L21/02491H01L21/02554H01L21/02612H01L29/0657
Inventor 陈梓敏王钢陈伟驱
Owner 上海您惦半导体科技有限公司