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A method for large-area transfer to prepare nanostructures

A nano-structure and large-area technology, applied in nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem that it is difficult to ensure the uniformity of AAO nano-hole speed, hinder the application and promotion of AAO pattern transfer method, and the hole has not reached And other issues

Active Publication Date: 2021-10-08
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, method (1) meets the requirements of large-area uniformity, but the process itself depends on the nanoimprint method, and the target materials are limited to a small number of limited plastic materials. For conventional semiconductor materials, the nanostructure information in the subsequent pattern transfer Partially submerged in the undulations introduced by the unevenness of the AAO surface, the transfer of high-precision nanostructures cannot be achieved
Method (2) uses a thinner (2 o 3 It is relatively brittle, so it is difficult to obtain a large-area double-pass AAO film, and the forming area is usually limited to 1cm 2 within
Method (3) is based on the anodic oxidation method of aluminum with a limited thickness (usually within 500nm). Due to the limited anodic oxidation time, the regularity of the obtained AAO nanopore structure is poor; secondly, it is difficult to guarantee the growth speed of AAO nanopores in this method. Uniformity, the shorter the growth time, the holes will not reach the substrate interface, and the longer the growth time will lead to the growth of Al 2 o 3 Falling off and the resulting graphics transfer and other issues
The above three methods of preparing nanostructures using the AAO template method have their own advantages and characteristics. However, none of the methods can well take into account the needs of low cost, high precision, high uniformity, and large-area nanostructure transfer, which hinders the AAO pattern. Application and promotion of transfer method in the fields of optics and optoelectronic devices

Method used

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  • A method for large-area transfer to prepare nanostructures
  • A method for large-area transfer to prepare nanostructures
  • A method for large-area transfer to prepare nanostructures

Examples

Experimental program
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Embodiment 1

[0034] S1: Take an Al sheet with a purity of 99.99% and immerse it in a 0.3 mol / L oxalic acid solution, and perform the first oxidation at room temperature with a voltage of 40V for 1-2 minutes, preferably 2 minutes. Then, with 3 wt% H at 40 °C 3 PO 4 +1.2wt%H 2 CrO 4 After removing the oxide layer, the solution is put into 0.3 mol / L oxalic acid solution for the second oxidation for 3-6 minutes, preferably 5 minutes. Finally placed in the concentration of not more than 5wt% H 3 PO 4 solution, at 60°C, after the hole expansion is completed, take it out and dry it in the air to obtain the required single-pass AAO porous nanostructure template based on Al. The single-pass AAO porous nanostructure template has an AAO / Al composite structure, such as figure 1 shown.

[0035] S2: if figure 2 As shown, the surface of the single-pass AAO porous nanostructure template in the S1 step is spin-coated twice, and the first spin-coating uses 5% to 10%, preferably 6% PMMA-anisole solut...

Embodiment 2

[0041] Compared with Embodiment 1, this embodiment differs in that the specific operation of step S6 of this embodiment is different, specifically:

[0042] Such as Figure 5 As shown in (d)-(g), the SiO 2 Coating, then remove the AAO film layer, and then use SiO 2 For the mask, use SF 6 +O 2 dry etching, in SF 6 and O 2 The gas flow ratio is 10:12, the RF power is 110W, and the ICP power is 320W, and a cylindrical nanostructure is obtained on the surface of the target substrate. The structure is as follows Figure 7 shown.

Embodiment 3

[0044] Compared with Embodiment 2, this embodiment differs in that the specific operation of step S6 of this embodiment is:

[0045] After obtaining cylindrical nanostructures, such as Figure 5 As shown in steps (g) and (h), by SF 6 +C 4 f 8 Dry etching, controlled etching gas SF 6 and C 4 f 8 The gas flow ratio is 10:13. Under the conditions of RF power of 100W and ICP power of 300W, the cylindrical nanostructure is etched and modified for about 40s, and the following Figure 8 The parabolic-like nanostructure shown.

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Abstract

The invention relates to the technical field of nanostructures, in particular to a method for preparing nanostructures by large-area transfer, using Al as a substrate, and adopting two anodic oxidation methods to prepare single-pass AAO porous nanostructure templates, and to prepare single-pass AAO porous nanostructure templates. Spin-coating is performed twice, and then the double-pass AAO nanoporous film is prepared by the drainage method and the dry etching preparation process, and finally the nanostructure is obtained on the surface of the target substrate. The invention is a large-area transfer method for preparing nanostructures, which can realize large-area transfer of ultra-thin AAO array nanostructures to target substrates, and can be prepared on target substrates with high precision, low cost, no damage and high uniformity. Highly regular nanostructures with the same characteristic size as AAO.

Description

technical field [0001] The invention relates to the technical field of nanostructures, in particular to a method for large-area transfer and preparation of nanostructures. Background technique [0002] Since the disclosure of the process of using porous anodized aluminum oxide (AAO) as the initial template to replicate the preparation of nanostructures, the use of this method to prepare nanostructures by photolithography or deposition has shown a wide range of application values. However, how to use AAO The template method to achieve low-cost, large-area, high-uniformity, high-precision, and non-destructive pattern transfer is the key that has always existed and hindered the development of this nanostructure preparation method. [0003] At present, there are mainly three ways to prepare nanostructures by using AAO template method: (1) using plastic polymers to replicate the pore structure of AAO to obtain nano-columnar structures with reversed morphology; (2) preparing doubl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/308B82Y40/00
CPCB82Y40/00H01L21/3086
Inventor 孙堂友曹乐李海鸥傅涛刘兴鹏陈永和肖功利李琦张法碧李跃
Owner GUILIN UNIV OF ELECTRONIC TECH