Preparation method of MWT solar cell

A technology for solar cells and cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as increased fragmentation rate, achieve the effects of reducing fragmentation rate, improving battery conversion efficiency, and reducing warpage

Inactive Publication Date: 2019-08-09
WUXI DEXIN SOLAR POWER
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, thinning is a double-edged sword. Thinning can reduce costs, but the fragmentation rate will also increase, which is also one of the main factors restricting the promotion of thinning

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of MWT solar cell
  • Preparation method of MWT solar cell
  • Preparation method of MWT solar cell

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] like Figure 1 to Figure 5 As shown, the technical solution provided by the present invention is a preparation method of a MWT solar cell, and the preparation method comprises the following steps:

[0042] Step 1, using a thin silicon wafer 1 as the substrate of the battery, removing the damaged layer on the surface of the silicon wafer 1, cleaning and texturing the silicon wafer 1, reducing the recombination rate of photogenerated carriers, and simultaneously Made of suede to reduce reflectivity;

[0043] Step 2, Diffusion: Deposit dopant sources on the substrate of silicon wafer 1 and perform diffusion to prepare a PN junction. Silicon wafer 1 is diffused on one side in a diffusion furnace in a back-to-back manner;

[0044] Step 3, etching: removing the PN junction around and on the back of the diffused silicon wafer 1, removing the phosphosilicate glass, and performing back polishing;

[0045] Step 4, annealing: annealing the silicon wafer 1 after etching;

[0046...

Embodiment 1

[0057] 1. Silicon wafer 1: use solar-grade P-type monocrystalline or polycrystalline silicon wafer 1 with a thickness of 140 μm as the substrate;

[0058] 2. Laser drilling 2: Press the silicon wafer 1 as figure 1 As shown in the 6×6 array pattern, use the laser to make 2 holes corresponding to the laser holes on the cell.

[0059] 3. Texturing: Cleaning and texturing using conventional chemical cleaning and texturing methods;

[0060]4. Diffusion: Use POCl3 diffusion source for high-temperature back-to-back single-sided diffusion, and the diffusion resistance is controlled at 30-150Ω;

[0061] 5. Etching: Use conventional chemical solutions for chemical post-cleaning, remove the peripheral and back PN junctions, remove the phosphosilicate glass formed on the surface of the silicon substrate after diffusion, and perform back polishing;

[0062] 6. Annealing: the etched silicon wafer 1 is annealed at a temperature of 600-750° C. using a conventional atmospheric pressure diffu...

Embodiment 2

[0073] 1. Silicon wafer 1: use solar-grade P-type monocrystalline or polycrystalline silicon wafer 1 with a thickness of 140 μm as the substrate;

[0074] 2. Texturing: Cleaning and texturing using conventional chemical cleaning and texturing methods;

[0075] 3. Diffusion: use POCl3 diffusion source for high-temperature back-to-back single-sided diffusion, and the diffusion resistance is controlled at 30-150Ω;

[0076] 4. Etching: Use conventional chemical solutions for chemical post-cleaning, remove the peripheral and back PN junctions, remove the phosphosilicate glass formed on the surface of the silicon substrate after diffusion, and perform back polishing;

[0077] 5. Annealing: the etched silicon wafer 1 is annealed at a temperature of 600-750° C. in a conventional atmospheric pressure diffusion furnace.

[0078] 6. Preparation of the passivation layer on the back: use chemical vapor deposition (CVD) to coat a layer of AlOx passivation film with a thickness of 5-50nm on...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of an MWT solar cell. According to the method, the production technical scheme of a double-sided MWT + cell is provided to ensure the basic conversion efficiency and cost advantages of the MWT + cell. The MWT + aluminum grid double-sided cell technology is applied to reduce the warpage problem caused by the sheet so that the fragmentation rate of the cell and the assembly process can be reduced; meanwhile, the MWT + double-sided cell technology effectively improves the conversion efficiency of the cell.

Description

technical field [0001] The invention relates to the technical field of silicon solar cells, in particular to a method for preparing MWT solar cells. Background technique [0002] Metal perforated silicon solar cell (MWT) is a high-efficiency cell, which transfers the energy collected from the front through the cell to the back of the cell through laser drilling, so as to reduce the shading area and improve the conversion efficiency. Patent CN201410016190.6 A low-cost preparation method of MWT is provided. Since there is no other difference between the MWT battery process and the conventional battery process except for the requirements of laser drilling and insulation isolation, the MWT battery can be compatible with black silicon, PERC, HIT and other technologies. Among them, patent CN201410016190.6 also provides a preparation process of MWT combined with PERC technology. [0003] How to improve cell conversion efficiency and reduce production cost has always been an etern...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/02245Y02E10/50Y02P70/50
Inventor 黄智王波职森森燕中宝徐涛徐建华沈洪飞李质磊吴仕梁路忠林张凤鸣
Owner WUXI DEXIN SOLAR POWER
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products