Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of nanocrystalline Cu-S-based block thermoelectric material

A technology of thermoelectric materials and nanocrystals, which is applied in the field of preparation of nanocrystalline Cu-S-based bulk thermoelectric materials, to achieve the effects of improving power factor, improving sintering activity, and inhibiting the volatilization of S elements

Pending Publication Date: 2019-08-13
UNIV OF SCI & TECH BEIJING +2
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] So far, the preparation of Cu-S-based nano-precursor powder by mechanical alloying reaction, combined with room temperature and high-pressure sintering technology to prepare high-density nanocrystalline Cu-S-based bulk thermoelectric materials has not been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nanocrystalline Cu-S-based block thermoelectric material
  • Preparation method of nanocrystalline Cu-S-based block thermoelectric material
  • Preparation method of nanocrystalline Cu-S-based block thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] On the contrary, the invention covers any alternatives, modifications, equivalent methods and schemes within the spirit and scope of the invention as defined by the claims. Further, in order to make the public have a better understanding of the present invention, some specific details are described in detail in the detailed description of the present invention below. The present invention can be fully understood by those skilled in the art without the description of these detailed parts.

[0026] A method for preparing a nanocrystalline Cu-S-based bulk thermoelectric material, the preparati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Grain sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a nanocrystalline Cu-S-based block thermoelectric material, and belongs to the technical field of thermoelectric materials. A mechanical alloying reaction is combined with an indoor temperature high-pressure sintering technology, elementary substance Cu powder, S powder and doping element A powder are taken as raw materials, A is Se or Te, and according to the chemical general formula Cu2-xS1-yAy, preparation is conducted, wherein x is greater than or equal to 0 and less than or equal to 0.2, and y is greater than or equal to 0 and less than or equal to 0.5; through the mechanical alloying reaction, high-sintering-activity nanoscale pre-synthesized powder is obtained, and then in combination with the indoor temperature high-pressure sinteringtechnology, the nanocrystalline Cu-S-based block thermoelectric material with uniform components, fine crystal particles and a compact structure is prepared. The prepared nanocrystalline Cu-S-based block thermoelectric material is of a nanocrystalline structure, the crystal particle size is 10-80 nanometers, the structure is compact, the relative density is greater than 97%, composition components are uniform in distribution, and the power factor is 1.1*10<-4>-7.5*10<-4>Wm<-1>K<-2> under the 623K condition. According to the preparation method, S element volatilization can be effectively inhibited, the crystal particle size can be effectively controlled, effective solid dissolution of the doping element in a base material can be effectively promoted, and adjustment and control over the thermoelectric performance in a larger component range are facilitated.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and relates to mechanical alloying reaction and normal temperature and high pressure sintering technology, in particular to a method for preparing nanocrystalline Cu-S-based block thermoelectric materials. Background technique [0002] The world's increasing demand for energy, the depletion of fossil energy, and the serious environmental pollution caused by the use of fossil energy have aroused widespread concern around the world. Guaranteeing reliable and cheap energy supply, realizing efficient energy use, low-carbon environmental protection has become the top priority of energy policies of various governments. Thermoelectric materials are functional materials that can directly convert heat and electricity into each other. Thermoelectric conversion devices have the characteristics of small size, high reliability, and no pollution. They have broad application prospects in the f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/547C04B35/622C04B35/626C04B35/64
CPCC04B35/547C04B35/622C04B35/62605C04B35/64C04B2235/602C04B2235/781
Inventor 张波萍张瑞裴俊聂革孙强
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products