Infrared led device and its preparation method
An LED device, infrared technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low light output rate, power loss, inapplicability, etc., to improve the recombination rate, miniaturization, and reliability.
Active Publication Date: 2020-12-04
SHENZHEN INST OF ADVANCED TECH
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Problems solved by technology
Whether the existing iris recognition infrared LED device has a GaAs substrate structure or a Si substrate structure, the substrate has a strong absorption loss for the light of 810nm to 830nm, the light output rate is low, and the power loss is serious, so it is not suitable for Demand for Iris Recognition Infrared LED Devices Based on Mobile Terminal Equipment
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[0023] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses. In the drawings, the same reference numerals will be used to denote the same elements throughout.
[0024] refer to figure 1 The infrared LED device in this embodiment includes a reflective layer 1, a first infrared epitaxial layer 2, a tunnel junction 3, a second infrared epitaxial layer 4, a superlattice electron blocking layer 5 and Coarse window layer6.
[0025] Specifically, the reflective layer 1 is located at the bott...
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Abstract
The invention provides an infrared LED device and a manufacturing method thereof. The infrared LED device comprises a reflective layer, a first infrared light epitaxial layer, a tunneling junction, asecond infrared light epitaxial layer, a superlattice electron barrier layer and a roughening window layer which are stacked in this order from bottom to top. The substrate of the entire infrared LEDdevice is removed so as to achieve miniaturization. Forming two emission centers through the first infrared light epitaxial layer and the second infrared light epitaxial layer increases an electron-hole recombination rate in cooperation with the superlattice electron barrier layer, thereby enhancing the light-emitting efficiency of the infrared LED device. The reflective layer and the roughening window layer reduce the absorption of infrared light and total reflection phenomena, thereby improving, while achieving miniaturization, the light extraction efficiency, reducing the power loss, and improving reliability.
Description
technical field [0001] The invention relates to the technical field of infrared LED devices, in particular to an infrared LED device and a preparation method thereof. Background technique [0002] As a human biometric technology, iris recognition technology has extremely high accuracy and security, and is widely considered to be the most promising biometric technology in the 21st century. The application of iris recognition technology depends on the development of iris recognition system, which includes infrared emitting device, infrared camera and iris recognition algorithm. With the development of LEDs, especially the rapid development of infrared LEDs, infrared LED products suitable for iris recognition have appeared. At present, the application of iris recognition technology in many fields has been relatively mature, but it has not been widely used in mobile terminal devices such as mobile phones, tablets, and notebook computers. These mobile terminal devices are the mo...
Claims
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IPC IPC(8): H01L33/14H01L33/22H01L33/30H01L33/06H01L33/10H01L33/00
CPCH01L33/0062H01L33/06H01L33/10H01L33/145H01L33/22H01L33/30
Inventor 侯玉欣陈明何可李威威张道书杨春雷
Owner SHENZHEN INST OF ADVANCED TECH