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Indirect band gap light emitting device

A light-emitting device and indirect technology, applied in the field of light-emitting devices made of indirect bandgap semiconductor materials

Pending Publication Date: 2019-08-16
INSIAVA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] Another benefit of SOI CMOS over its bulk counterpart is its ability to create simple circuit structures with limited utilization of carrier materials, in addition to the usual transistor devices in the device layer

Method used

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  • Indirect band gap light emitting device
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Embodiment Construction

[0058]The following description of the disclosure is provided as an enabling teaching of the disclosure. Those skilled in the relevant art will recognize that many changes can be made to the described embodiments while still obtaining the beneficial results of the present disclosure. It will also be apparent that some of the desirable benefits of the disclosure can be obtained by selecting some of the features of the disclosure without using other features. Accordingly, those skilled in the art will recognize that modifications and adaptations to the present disclosure are possible and may even be desirable in certain circumstances and are considered a part of this disclosure. Accordingly, the following description is provided as an illustration of the principles of the disclosure and not as a limitation of the disclosure.

[0059] Light emitting devices according to the present disclosure are fabricated from indirect bandgap materials and in Figure 1 to Figure 3 are genera...

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Abstract

An indirect band gap light emitting device comprises a first body of non-monocrystalline indirect band gap semiconductor material. In this first body, two regions are formed: a first region with a first doping kind and a first doping concentration and a second region with a second doping kind and a second doping concentration. A junction is formed between the first region and the second region with a terminal arrangement connected to the first body and arranged to reverse bias the junction so as to emit light. The first body is formed from a deposited layer of semiconductor to form an integralpart of a substrate. An integrated circuit can include the light emitting device and a second body of monocrystalline indirect band gap semiconductor material. A third body may separate and galvanically isolate the first and second bodies from each other.

Description

technical field [0001] The present disclosure relates generally to optoelectronic devices and more particularly to light emitting devices fabricated from indirect bandgap semiconductor materials. Background technique [0002] silicon light emitting [0003] Silicon is the primary material of choice for the manufacture of electronic integrated circuits (ICs) in nearly all modern electronic devices. The main fabrication technology used for IC fabrication is CMOS (Complementary Metal-Oxide Semiconductor), which exploits silicon's ability to epitaxially grow a particularly high-quality thermal oxide used as a gate insulating layer to create bipolar on a single chip. Transistor devices. [0004] Although silicon is well suited for integrating electronics, due to its indirect bandgap material properties, silicon is a poor emitter of optics. Nonetheless, the viability of silicon light emitters could be very useful. This has been the subject of numerous academic and commercial p...

Claims

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Application Information

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IPC IPC(8): H01L25/16H01L33/18H01L33/26H05B37/02
CPCH01L25/167H01L33/18H01L33/34H05B47/10H01L27/153H01L33/0058H01L33/28
Inventor 彼得鲁斯·约翰内斯·文特尔马里乌斯·欧热内·古森克里斯托·让森·万·伦斯堡尼克拉斯·马托伊斯·富尔
Owner INSIAVA
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