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Preparation method of oxide film layer

A technology of oxide film and oxygen, which is applied in the field of oxide film, can solve the problem of low density of silicon oxide film, and achieve the effects of simple method, improved compactness and strong applicability

Inactive Publication Date: 2019-08-27
TRULY OPTO ELECTRONICS
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to address the shortcomings of the above-mentioned technologies, and propose a method for preparing an oxide film, aiming at solving the problem of low density of the existing silicon oxide film

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  • Preparation method of oxide film layer
  • Preparation method of oxide film layer
  • Preparation method of oxide film layer

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Embodiment Construction

[0021] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other; the present invention will be described in detail below with reference to the drawings and in combination with the embodiments.

[0022] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise", "Axial", The orientation or positional relationship indicated by "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the referred device or element Must be in a particular orientation, be con...

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Abstract

The invention provides a preparation method of an oxide film layer. The preparation method comprises the following specific steps that a target material power source is turned on, a target material baffle is opened, a small amount of oxygen is introduced between target material and a base plate, the oxygen is ionized into oxygen atoms, target material atoms are sputtered onto the base plate, so that the target material atoms is combined with the ionized oxygen atoms to generate oxide, so that the oxide film layer is formed on the base plate; and the target material power source is turned off,the target material baffle is closed, a plasma power source of an anode layer is turned on, oxygen is introduced between an ion source and the base plate, the oxygen are ionized into oxygen ions, theoxygen ions are emitted from plasma part of the anode layer and to the oxide film layer base plate, so that gaps among the oxide molecules are filled. By adopting the technical scheme, the compactnessof silicon oxide film is greatly improved, the reliability of the silicon oxide film is improved, and the service life of the silicon oxide film is prolonged.

Description

technical field [0001] The invention belongs to the technical field of oxide films, and in particular relates to a preparation method of an oxide film layer. Background technique [0002] Electronic products need to be coated when making electronic circuits and making surface color effects, anti-reflection, and anti-fingerprints; the compactness of the film structure directly affects the reliability and life of the product; the target atoms are deposited from the target to the substrate during the coating process During the process, since the target atoms are large and there are gaps between the atoms, the gaps cannot accommodate one target atom, so there are gaps between the target atoms. This gap makes the structure of the film loose, resulting in a low density. Contents of the invention [0003] The object of the present invention is to propose a method for preparing an oxide film aimed at solving the problem of low density of the existing silicon oxide film in view of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/10C23C14/35C23C14/58
CPCC23C14/0036C23C14/08C23C14/10C23C14/35C23C14/5826
Inventor 吴德生李志成
Owner TRULY OPTO ELECTRONICS
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