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Semiconductor structures and methods of forming them

A technology of semiconductor and conductive structure, applied in the field of semiconductor structure and its formation, can solve the problems such as affecting the efficiency of CIS manufacturing and taking a long time, and achieve the effect of making up for the loss of manufacturing yield, avoiding mutual influence, and improving manufacturing efficiency

Active Publication Date: 2021-07-23
ICLEAGUE TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the time-consuming process of the entire CIS process affects the production efficiency of CIS. Therefore, the CIS process still needs to be improved.

Method used

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

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Embodiment Construction

[0031] The process steps of forming a semiconductor structure mainly include: providing a substrate, forming a device layer on the surface of the substrate; forming a dielectric layer covering the surface of the device layer; etching the For the dielectric layer, a groove is formed in the dielectric layer, and the bottom of the groove exposes the surface of the device layer; a pad structure is formed in the groove, and the pad structure is electrically connected to the device layer.

[0032] The process time of the semiconductor structure formed by the above method is long, and the reasons for the analysis are:

[0033] The formation processes of the device layer, the dielectric layer, the groove and the pad structure are performed sequentially, and the next formation process can only be performed after one formation process is completed. For example, the formation process of the dielectric layer can only be performed after the formation process of the device layer is complete...

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Abstract

A semiconductor structure and a forming method thereof, the forming method comprising: providing a first substrate, the first substrate having opposite first and second carrying surfaces; forming a device layer on the second carrying surface; A second substrate is provided, the second substrate has an opposite first surface and a second surface; a pad structure is formed in the second substrate, and the pad structure penetrates from the first surface to the second surface ; after forming the device layer and the pad structure, bonding the first substrate and the second substrate with the first surface facing the first substrate, so that the pad structure and the pad structure The device layers are electrically connected. The invention helps shorten the process time for forming semiconductor structures.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] The image sensor is an important part of the digital camera, which is used to convert the optical image of the two-dimensional light intensity distribution into a one-dimensional time-sequential electrical signal. [0003] According to different components, image sensors can usually be divided into CCD (Charge-Coupled Device, charge-coupled device), CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor element) and CIS (Contact Image Sensor, contact image sensing device) . [0004] Among them, CIS uses a contact photosensitive element for light sensing, and uses a large number of densely arranged red, green, and blue three-color LED sensors to generate a white light source, replacing the CCD array, lens, fluorescent tube, and cold cathode ray in the CCD sc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14634H01L27/14636H01L27/14678H01L27/1469
Inventor 谢志峰
Owner ICLEAGUE TECH CO LTD