Subthreshold reference voltage generation circuit with ultra-low power consumption, low voltage and low temperature drift

Abstract

The invention provides a subthreshold reference voltage generation circuit with ultra-low power consumption, low voltage and low temperature drift. The subthreshold reference voltage generation circuit belongs to the technical field of power management, and comprises a starting circuit, a current reference circuit, a VPTAT circuit and a VCTAT circuit. The purpose of the starting circuit is to prevent the situation of zero-current transmission. After the circuit operates normally, a core structure of current reference is utilized to generate a nanoampere-level reference current at first, wherein the core structure comprises a high-threshold MOS tube and a low-threshold MOS tube, and a current mirror is utilized to provide bias for the VPTAT circuit and the VCTAT circuit. A voltage with a negative temperature coefficient is generated by utilizing a gate-to-source voltage difference of the MOS tubes with different threshold voltages, and a voltage with a positive temperature coefficient is generated by utilizing a gate-to-source voltage difference of the MOS tubes with identical threshold voltages. The two voltages with the different temperature coefficients are superposed and compensated with each other to generate a reference voltage. The subthreshold reference voltage generation circuit can complete low-voltage output and low-temperature-drift design indexes under the premise of achieving the ultra-low power consumption and decreasing the layout area.

Description

technical field [0001] The invention belongs to the technical field of voltage management. Specifically, it relates to the design of a sub-threshold reference voltage generation circuit with ultra-low power consumption, low voltage and low temperature drift. Background technique [0002] With the development of artificial intelligence technology, wearable devices and implanted medical products have received widespread attention from consumers. Due to the limited size and capacity of batteries in wearable and implantable devices, how to reduce the power consumption of power management chips becomes very important. Among them, the voltage reference circuit is one of the important modules in the chip, and its main function is to provide accurate voltage reference for subsequent circuits. Therefore, it is particularly critical to design a voltage reference with good performance. With the continuous improvement of integrated circuit manufacturing technology, the process feature...

AI Technical Summary

Problems solved by technology

[0016] The purpose of the present invention is to overcome the problems of large output voltage and insufficient temperature characteristics in the existing sub-threshold voltage reference technology, and provide a sub-threshold reference voltage generation circuit with ultra-low power consumption, low voltage and low temperature drift

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