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Silicon carbide junction barrier Schottky diode

A junction barrier Schottky and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of long reverse recovery time, high energy consumption, and large peak current of PiN diodes

Pending Publication Date: 2019-10-25
PN JUNCTION SEMICON HANGZHOU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in high-frequency circuits, the PiN diode reverse recovery time is long, the peak current is large, and the energy consumption is high

Method used

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  • Silicon carbide junction barrier Schottky diode
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Embodiment Construction

[0018] In order to show the achievements of the present invention more clearly, the present invention will be further elaborated below in conjunction with the accompanying drawings.

[0019] The invention provides a SiC schottky diode. In this embodiment, the first conductivity type is N type, and the second conductivity type is P type. It includes a SiC substrate (1), on which a SiC epitaxial layer (2) of the first conductivity type, that is, a buffer layer, is prepared. A larger active region (3) of the first conductivity type is arranged on the surface of the buffer layer, and a Schottky contact electrode (7) is arranged on the surface of the active region. An implantation region (4) doped with the second conductivity type is provided under the Schottky contact electrode (7) to form a PiN junction with the SiC substrate (1) and SiC epitaxial layer (2), while the surface of the buffer layer The peripheral area is provided with junction terminations (5). In addition, a pas...

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PUM

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Abstract

The invention provides a SiC junction barrier Schottky diode having a low forward conduction voltage and a high reverse breakdown voltage. Active region implant is added to a drift region in a conventional JBS device, electric field distribution during reverse breakdown can be effectively dispersed, a reverse withstand voltage is increased, and the device achieves a higher breakdown voltage without sacrificing forward conduction characteristics of the device.

Description

technical field [0001] The invention relates to the field of semiconductor devices. More specifically, a silicon carbide junction barrier Schottky diode. Background technique [0002] In the field of power devices, compared with the traditional material Si, SiC material has a wider band gap, and the device's withstand voltage and high temperature characteristics will be better. Silicon carbide devices have excellent breakdown resistance, so under the same electrical performance requirements, silicon carbide devices can have a thinner thickness than silicon-based devices. At the same time, the silicon carbide device has a smaller on-resistance, which can reduce the forward conduction loss and improve the conversion efficiency. [0003] The high temperature resistance of silicon carbide power devices allows them to operate at temperatures of 600°C, while corresponding silicon devices do not exceed 200°C. In addition, the forward conduction characteristics and reverse blocki...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/16H01L29/06
CPCH01L29/872H01L29/1608H01L29/0615
Inventor 吴昊张梓豪陈欣璐黄兴
Owner PN JUNCTION SEMICON HANGZHOU CO LTD