High-speed gate pulse modulation circuit and radio frequency power amplifier

A gate pulse modulation and circuit technology, applied in the direction of radio frequency amplifiers, power amplifiers, amplifiers, etc., to achieve the effect of preventing burnout, avoiding burnout, and small duty cycle

Active Publication Date: 2021-08-27
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention is to overcome the defect of the drain modulation of the existing gallium nitride power amplifier, and proposes a high-speed gate pulse modulation circuit and a radio frequency power amplifier with the function of negative power-on sequence protection

Method used

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  • High-speed gate pulse modulation circuit and radio frequency power amplifier
  • High-speed gate pulse modulation circuit and radio frequency power amplifier

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Embodiment Construction

[0038] The present invention will now be described in more detail in conjunction with the accompanying drawings and specific examples, but the embodiments of the present invention are not limited thereto;

[0039] like figure 1 As shown, a high-speed gate pulse modulation circuit with a negative power-on sequence protection function includes: a voltage conversion circuit 11, a pulse switch circuit 12, a voltage comparison circuit 13, and a drain power supply circuit 14; the input terminal of the voltage conversion circuit 11 Connect with the first power supply+5V, the output end of voltage conversion circuit 11 is connected with the input end of pulse switch circuit 12, the output end of pulse switch circuit 12 is connected with the input end of voltage comparison circuit 13, the output end of voltage comparison circuit 13 is connected with The input terminal of the drain power supply circuit 14 is connected. The output terminal of the pulse switch circuit 12 and the output t...

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Abstract

The invention discloses a high-speed gate pulse modulation circuit and a radio frequency power amplifier with a negative power-on sequence protection function. The circuit includes: a voltage conversion circuit, a pulse switch circuit, a voltage comparison circuit, and a drain power supply circuit; The output terminal is connected to the input terminal of the pulse switch circuit, the output terminal of the pulse switch circuit is connected to the input terminal of the voltage comparison circuit, and the output terminal of the voltage comparison circuit is connected to the input terminal of the drain power supply circuit. The RF power amplifier is an indispensable key component in the communication system, especially in the radar field, its control and power-on protection are the key to the application of the RF power amplifier. In the present invention, before the negative electricity is powered on or when the negative electricity is too high, the drain is always disconnected, avoiding the risk of gallium nitride transistor burnout, high reliability, and realizing high-speed pulse modulation, with high frequency, duty cycle The advantage of small ratio further improves the modulation accuracy and speed.

Description

technical field [0001] The invention relates to the field of grid pulse modulation circuits, in particular to a high-speed grid pulse modulation circuit and a radio frequency power amplifier with a negative power-on sequence protection function. Background technique [0002] Gallium nitride power amplifier (amplifier composed of gallium nitride transistors) is the latest high-power amplifier with superior performance. It has small size, high power, large band gap, high thermal conductivity, high operating temperature, small on-resistance The advantage of higher carrier mobility is the development trend of highly integrated, high-power, and miniaturized power amplifier chips. However, due to its high drain operating voltage, negative gate operating voltage, and gate voltage The greater the degree of conduction, the greater the degree of conduction. When the gate voltage is 0V, the GaN transistor is in the conduction state, and the on-resistance is very small. If the drain is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/011H03K5/24H03F1/02H03F1/52H03F3/193H03F3/21
CPCH03F1/0211H03F1/523H03F3/193H03F3/21H03F2200/451H03K3/011H03K5/2472
Inventor 徐思凯王志宇张兵周琪康宏毅唐嘉浩郁发新
Owner ZHEJIANG UNIV
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