Method for removing photoresist residues and semiconductor device manufacturing method

Abstract

The invention provides a method for removing photoresist residues and a semiconductor device manufacturing method. The method for removing photoresist residues comprises the steps that a wafer which comprises an intermediate region and an edge region surrounding the intermediate region is provided; a photoresist layer is formed on the intermediate region and the edge region of the wafer; at leasta hydrophilic organic solvent is coated on the photoresist layer in the edge region; and a de-edge process is used to remove the photoresist layer and the organic solvent in the edge region. Accordingto the technical scheme of the invention, the photoresist layer in the edge region of the wafer is completely removed, thereby preventing photoresist residues from affecting a subsequent process.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for removing photoresist residues and a manufacturing method for semiconductor devices. Background technique [0002] During the processing and manufacturing of semiconductor chips, it is usually necessary to trim (trimming) the edge of the wafer, so as to eliminate the influence of defects on the edge of the wafer on the subsequent bonding (bonding) process. For example, in the manufacturing process of a backside illuminated CMOS image sensor (BSI CIS for short), it is usually necessary to trim the edge of the wafer to remove part of the thickness before the bonding process, so as to avoid causing Defects such as peeling of the wafer edge. [0003] After the wafer edge trimming process, when the photolithography process needs to be carried out in the process of continuing to form a film structure (such as a metal interconnection structure, etc.) on the w...

AI Technical Summary

Problems solved by technology

Moreover, when the photoresist at the edge of the step top W1 of the step is washed and removed by using the edge photoresist removal technology, part of the photoresist will be washed and accumulated at the corner (trimming corner) of the step, and the accumulated photoresist The thickness is also much more than 10μm, such as Figure 1c As shown, the position D3 is the photoresist accumulated at the corner of the bottom W2 of the step. This part of the photoresist will fall off after high-temperature baking in the subsequent process, and become particulate foreign matter to contaminate the film layer on the wafer. structure, resulting in poor product

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