Copper-based graphene low-sensitivity composite busbar and manufacturing method thereof

Abstract

The invention discloses a copper-based graphene low-sensitivity composite busbar and a manufacturing method thereof. The copper-based graphene low-sensitivity composite busbar includes a copper-basedgraphene composite conductor layer, a first insulation layer disposed on a first surface of a first graphene film of the copper-based graphene composite conductor layer, and a second insulation layerdisposed on a second surface of a second graphene film of the copper-based graphene composite conductor layer. Wherein, the copper-based graphene composite conductor layer includes: a copper plate, the first graphene film disposed on the first surface of the copper plate, and a second graphene film disposed on the second surface of the copper plate, and the first surface is disposed opposite to the second surface. Since the copper-based graphene low-sensitivity composite busbar of the invention utilizes the copper-based graphene composite conductor layer as a conductor layer, temperature riseof the low-sensitivity composite busbar can be effectively reduced, parasitic inductance of the low-sensitivity composite busbar can be reduced, the switching frequency of an IGBT can be further improved, and the degree of lightweight of the low-sensitivity composite busbar is significantly improved.

Description

technical field [0001] The invention relates to a low-sensitivity composite busbar, in particular to a copper-based graphene low-sensitivity composite busbar and a manufacturing method thereof. Background technique [0002] The low-inductance composite busbar is used as a bus for integrating various devices in a relatively high-power power electronic circuit, and is named for its low mutual inductance between parallel lines. Low-inductance composite busbars are usually used in circuits with high integration and low inductance requirements. At present, they are widely used in converters and inverters in the fields of rail transit, wind power photovoltaics, and communications. They are generally used as insulated gate bipolar transistors ( IGBT) The electrical connection between the module and the capacitor. [0003] However, the structure of the low-inductance composite busbar in the prior art is bulky, and under high-current and high-frequency working conditions, its own re...

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is: the structure of the low-inductance composite busbar in the prior art is bulky, and under the working conditions of high current and high frequency, its own resistance heat generation is high, which makes it difficult to further reduce the parasitic inductance and cannot satisfy UHF applications

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