Chemical vapor deposition monitoring system and method

Abstract

The invention belongs to the field of thin film growth monitoring technologies and discloses a chemical vapor deposition monitoring system and method. According to the system, a thin film material isplaced in a chemical vapor deposition device; an optical imaging detection device comprises a femtosecond pulse laser device, a first cylindrical lens, a first virtual imaging phase array, a first diffraction grating, a first microscope objective, a second microscope objective, a second diffraction grating, a second virtual imaging phase array, a second cylindrical lens, a single-mode optical fiber, a photoelectric detector and a high-speed oscilloscope. According to the method, the growing process of the thin film material is monitored in real time through the optical imaging detection device, growing process information of the thin film material is obtained quickly in real time, and growing technological parameters are adjusted in real time to improve the growing quality of a thin film through comparison with data in a sample database. Therefore, the problem that in the prior art, chemical vapor deposition equipment cannot monitor the growing state of the thin film rapidly in real time is solved, and the technical effect that the growing information of the thin film material can be obtained rapidly in real time is achieved.

Description

technical field [0001] The invention relates to the technical field of film growth monitoring, in particular to a chemical vapor deposition monitoring system and method. Background technique [0002] Chips are the cornerstone of high-tech fields such as integrated circuits, high-density storage, display lighting, power electronics, and high-temperature sensors for aeroengines. The preparation of low-defect semiconductor thin films is the key to chip manufacturing. It plays an irreplaceable role in security. Chemical vapor deposition (CVD) is an ideal method for doping and regulating the growth of semiconductor thin films. It is a typical multi-physics, cross-scale, and high-precision complex process. During the thin film preparation process, due to the fluctuation of growth conditions and the mixing of pollutants and impurities in the growth environment, a series of defects are easily generated inside the prepared thin film material. The existence of these defects will gre...

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Problems solved by technology

[0006] The embodiment of the present application provides a chemical vapor deposition monitoring system and method, which solves the problem that the chemical vapor deposition equipment in the prior art cannot monitor the film growth state quickly and in real time

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