Method for improving residual microparticles on surface of wafer

Abstract

The invention provides a method for improving residual microparticles on the surface of a wafer. The method comprises the following steps of firstly, providing a plasma reaction etching cavity and a wafer positioned in the plasma reaction etching cavity, arranging a semiconductor structure on the wafer, and ensuring that the semiconductor structure is in a process state that etching of a first layer of metal groove is finished; secondly, forming a polymer protective layer on the surface of the wafer; thirdly, introducing a plasma source into the plasma reaction etching cavity to remove chargeson the surface of the wafer; and finally, stopping introducing the plasma source, and standing the wafer. According to the invention, after the completion of the groove etching process on the first layer of metal groove, a protective layer is formed on the surface of the wafer by using a gas source for depositing a polymer in the subsequent process. After that, microparticles in the cavity are adsorbed and brought out of the etching cavity by using a macromolecular gas source assisted destaticizing process in the subsequent destaticizing process, so that particle attachments caused in the wafer decharging process are solved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving microparticle residues on the wafer surface. Background technique [0002] The first metal connection layer is the first metal layer connected to the metal tungsten contact hole plug, which is a single damascene structure, and its main function is to locally connect and lead out the front-end devices. With the gradual development of integrated circuit technology nodes beyond 90nm, the etching technology of the first metal connection layer has also developed from the traditional two-pass etching technology of photoresist as a barrier layer, and adopts a "sandwich" structure multi-layer mask one-stop Etching technology, and then to the one-stop discrete immediate etching technology using metal TiN as a barrier layer. [0003] When the etching process is performed using metal TiN etc. as the hard mask technology of the first layer of metal trenches,...

AI Technical Summary

Problems solved by technology

[0004] In the process of mass production, the first layer of metal trench etching operation cavity increases with the number of operating hours and wafers, and more and more polymers accumulate on the surface of the cavity, usually through self-cleaning The process performs self-cleaning between wafer batches and between wafers, but too much self-cleaning process will seriously damage the chamber components, especially the electrostatic chuck, which will bring greater density source of defects, and second, it will lead to serious loss of production capacity and rising operating costs

Images